Boron quantification, concentration mapping and picosecond excitons dynamics in High-Pressure-High-Temperature diamond by cathodoluminescence

Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes

“…Time-resolved cathodoluminescence (TRCL) measurements find the lifetimes of our m -plane transitions to be remarkably short, even at 80 K (in our case, we generally find that lower temperatures extended the carrier lifetimes) . As seen in Figure d, a convoluted biexponential decay curve can be fitted to determine a carrier lifetime of 19 ps in the QW while accounting for the instrument response function . Factors such as localization, well widths, and point defect populations will modify these lifetimes, but such short lifetimes can only be explained by the absence of or significant reduction in the internal electric fields.…”

“…50 As seen in Figure 3d, a convoluted biexponential decay curve can be fitted to determine a carrier lifetime of 19 ps in the QW while accounting for the instrument response function. 51 Factors such as localization, well widths, and point defect populations will modify these lifetimes, but such short lifetimes can only be explained by the absence of or significant reduction in the internal electric fields. These short lifetimes are desirable for fast switching devices and may also help to reduce the influence of droop by keeping carrier densities tolerable, allowing for higher optical powers to be extracted.…”

Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence

“…The ratio between the two lines is proportional to the boron acceptor concentration in diamond, as established in previous works [3,14]. Instead of using calibration relations as in [15], the CVD standard sample is systematically measured together with the specimen mounted together in the same experimental run. This method solves the uncertainties issues related to the temperature dependence of the cw-CL sensitivity [3].…”