2008
DOI: 10.1016/j.jcrysgro.2008.06.039
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Boron phosphide as the buffer-layer for the epitaxial III-nitride growth: A theoretical study

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Cited by 25 publications
(5 citation statements)
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“…Th BP is a refractory semiconductor compound with peculiar properties. It is a III-V material with a strong covalent binding character, its zinc blende structural phase is the most stable one, and it is a promising material for use in optoelectronic and microelectronic devices working under difficult conditions such as high temperatures or aggressive environments [18].…”
Section: Introductionmentioning
confidence: 99%
“…Th BP is a refractory semiconductor compound with peculiar properties. It is a III-V material with a strong covalent binding character, its zinc blende structural phase is the most stable one, and it is a promising material for use in optoelectronic and microelectronic devices working under difficult conditions such as high temperatures or aggressive environments [18].…”
Section: Introductionmentioning
confidence: 99%
“…20 Also, the BP compounds can exist in planer (twodimensional), tubular (one-dimensional), or spherical shapes (zero-dimensional), quite the same as the graphene, carbon nanotubes, and fullerenes, respectively. All structures of BP compounds are prominent as large band-gap semiconductor material having many advanced properties such as promising materials for microelectronic and optoelectronic applications, 21,22 high thermal conductivity 23 hardness, and chemical stability, [23][24][25] a good candidate for application in catalysis. 20,26,27 With respect to both boron and phosphorus elements can form 2D materials, it is engaging to determine, whether the binary compound of boron and phosphorus can form stable clusters, which may display unusual structural and electronic properties better than both boron and phosphorus clusters.…”
Section: Introductionmentioning
confidence: 99%
“…Existence of boron/phosphorous (BP) ring nanostructures with refractory semiconducting behavior has been earlier investigated and reported [22]. The strong covalent bonds in the most stable zinc blende structural phase make the BP nano ring a promising material for electronic devices working under such difficult conditions as high temperatures or destructive environments [23]. Hence, making a decorated nanostructure with characteristic behaviors was proposed in the implementation of BP nano ring in the fullerene.…”
Section: Introductionmentioning
confidence: 99%