Boron nitride thin films synthesized by reactive sputtering

Hu, Cheng; Kotake, Shigeo; Suzuki, Yasuyuki; Senoo, Masafumi

doi:10.1016/s0042-207x(00)00343-2

Cited by 19 publications

(18 citation statements)

References 9 publications

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“…2b shows the GIXRD patterns. Turbostratic and hexagonal boron nitride share similar sp 2 -bonded structure, presenting the same two IR-active peaks at c800 and 1400 cm À 1 , associated with out-of-plane B-N-B bond bending and in-plane B-N bond stretching modes, respectively, while sp 3 -bonded c-BN show IR-active peak at c1080 cm À 1 [13,14]. The two absorption peaks observed in the FTIR spectra suggest that B-N bonds are formed.…”

Section: As-deposited Coatingsmentioning

confidence: 97%

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W-B-N sputter-deposited thin films for mechanical application

Louro

Lamni

Lévy

2005

Surface and Coatings Technology

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The structure, composition and hardness of reactively sputtered W-B-N thin films were investigated by XRD, EPMA, and Vickers ultramicroindentation.The chemical composition of the films was changed from W 80 B 20 to W 42 B 9 N 49 by varying the partial pressure of N 2 . All the as-deposited coatings were amorphous, except the W 60 B 17 N 23 film, which showed crystalline peaks, indexed as bcc a-W, overlapping the amorphous feature. This nanocomposite structure lead to a maximum as-deposited hardness of 36 GPa.The coatings were thermally annealed at 850 and 950 8C in Ar/H 2 atmosphere. All the films crystallised with the formation of the bcc a-W and/or the fcc-W 2 N phases, depending on their B and N contents. A small increase in hardness was registered for 850 8C annealing temperature in comparison to the as-deposited state. However, an inverse trend was detected after post-annealing at 950 8C, which was more evident for the high N content films. This behaviour was attributed to the formation of a soft external layer of boron nitride poorly crystallised. D

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Section: As-deposited Coatingsmentioning

confidence: 97%

“…They were analysed by FTIR, which is the nondestructive method often used for identification of BN phases [12][13][14][15] The IR adsorption spectra obtained are presented in Fig. 2a, while Fig.…”

Section: As-deposited Coatingsmentioning

confidence: 99%

W-B-N sputter-deposited thin films for mechanical application

Louro

Lamni

Lévy

2005

Surface and Coatings Technology

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“…However, the h-BN film thickness in these cases was limited to a few monolayers, which is insufficient to support carrier transport in device applications. Additionally, growth of h-BN layers on sapphire and silicon substrates has also been demonstrated [20][21][22]. Much of the recent interest in h-BN was stimulated by the report of growth of a thick h-BN film on an AlGaN layer by metal organic chemical vapor deposition (MOCVD) using a buffer layer [23].…”

Section: Introductionmentioning

confidence: 99%

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

2019

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Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

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“…The resulting similarities in the vibration modes of c-BN and w-BN make it very difficult to discriminate between both phases only by infrared spectroscopy alone, which is the most widely used tool to characterize BN films. 8 It has been suggested before that the geometric similarities at the t-BN/c-BN interface might be the reason for the nucleation of c-BN in analogy to the nucleation of diamond on graphite. 2,4,6,11,12 In this picture, the initial oriented t-BN layer serves as a preferential nucleation site providing the boundary conditions necessary for the formation of c-BN.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, a few studies report the formation of BN films by ion-assisted techniques containing various amounts of the wurtzite BN phase ͑w-BN͒. [8][9][10] w-BN is a sp 3 -bonded BN modification consisting of a two-layer ͑ABAB...͒ stacking of ͑0002͒ planes structurally identical to the ͕111͖ planes of the c-BN structure. The resulting similarities in the vibration modes of c-BN and w-BN make it very difficult to discriminate between both phases only by infrared spectroscopy alone, which is the most widely used tool to characterize BN films.…”

Section: Introductionmentioning

confidence: 99%

Cubic boron nitride thin film heteroepitaxy

Feldermann

Ronning

Hofsäß

et al. 2001

Journal of Applied Physics

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In this study we investigate the possibility of nucleating nanocrystalline cubic boron nitride (c-BN) thin films directly onto suitable substrates without the soft turbostratic BN (t-BN) interlayer that is usually observed. This would open a path to the epitaxial growth of c-BN films which is essential particularly for practicable applications in electronic devices. Appropriate substrates are required to exhibit a lattice that matches the c-BN crystallite structure, survives the ion bombardment imperative for c-BN film formation, and is not disturbed by the development of a heterogeneous interface layer. In accordance with these criteria, monocrystalline AlN is selected and employed as a potential substrate for direct c-BN film growth using mass selected ion beam deposition. A detailed examination of the BN/AlN interface microstructure by cross-sectional high-resolution transmission electron microscopy reveals that the AlN crystallinity is indeed retained, with no amorphous layer next to the BN film as commonly observed on Si substrates. Nanocrystalline BN grains with the cubic, and, more frequently, with the wurtzitic structure are found in direct contact with certain regions of the rugged AlN substrate, covering about one-third of its entire surface with no mediating t-BN or other interface layer. The c-BN and w-BN growth areas are textured and exhibit definite preferential orientation relationships with the faceted AlN substrate surface. The consequences of these findings for the understanding of the role of the t-BN interlayer in c-BN film nucleation are discussed.

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Boron nitride thin films synthesized by reactive sputtering

Cited by 19 publications

References 9 publications

W-B-N sputter-deposited thin films for mechanical application

W-B-N sputter-deposited thin films for mechanical application

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Cubic boron nitride thin film heteroepitaxy

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