Boron Laser Doping through High Quality Al2O3 Passivation Layer for Localized B-BSF PERL Solar Cells

Gall, S.; Manuel, S.; Lerat, Jean-François

doi:10.1016/j.egypro.2013.07.277

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…The dopant source can be gas, liquid, or solid [71]. Selective doping area, for example, selective emitter could be obtained by laser doping technology without the entire silicon substrate suffering from the high temperature process [72][73][74]. Along with its applications in laser texturing [75], laser ablation for contact opening [74] and laser-fired contact in solar cells [76,77], laser technique has a promising prospect in solar cells.…”

Section: Ibc Solar Cellmentioning

confidence: 99%

Review of status developments of high-efficiency crystalline silicon solar cells

Liu

Yao

Xiao

et al. 2018

J. Phys. D: Appl. Phys.

138

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In order to further improve cell efficiency and reduce cost in achieving grid parity, a large number of PV manufacturing companies, universities and research institutes have been devoted to a variety of low-cost and high-efficiency crystalline Si solar cells. In this article, the cell structures, characteristics and efficiency progresses of several types of high-efficiency crystalline Si solar cells that have been in small scale production or are promising in mass production are presented, including passivated emitter rear cell, tunnel oxide passivated contact solar cell, interdigitated back contact cell, heterojunction with intrinsic thin-layer cell, and heterojunction solar cells with interdigitated back contacts. Both the industrialization status and future development trend of high-efficiency crystalline silicon solar cells are also pinpointed.

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Section: Ibc Solar Cellmentioning

confidence: 99%

Review of status developments of high-efficiency crystalline silicon solar cells

Liu

Yao

Xiao

et al. 2018

J. Phys. D: Appl. Phys.

138

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“…The PCE value was raised from 7 to 11%, using the hybrid SC, by considering the passivation layer. A heavily-doped Boron back surface field (B-BSF) structure has been proposed, that offered a better field-effect passivation than the conventional Al-BSF 29 , 30 . Zhang et al.…”

Section: Introductionmentioning

confidence: 99%

Electrical performance of efficient quad-crescent-shaped Si nanowire solar cell

El-Bashar

Hussein

Hegazy

et al. 2022

Sci Rep

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The electrical characteristics of quad-crescent-shaped silicon nanowire (NW) solar cells (SCs) are numerically analyzed and as a result their performance optimized. The structure discussed consists of four crescents, forming a cavity that permits multiple light scattering with high trapping between the NWs. Additionally, new modes strongly coupled to the incident light are generated along the NWs. As a result, the optical absorption has been increased over a large portion of light wavelengths and hence the power conversion efficiency (PCE) has been improved. The electron–hole (e–h) generation rate in the design reported has been calculated using the 3D finite difference time domain method. Further, the electrical performance of the SC reported has been investigated through the finite element method, using the Lumerical charge software package. In this investigation, the axial and core–shell junctions were analyzed looking at the reported crescent and, as well, conventional NW designs. Additionally, the doping concentration and NW-junction position were studied in this design proposed, as well as the carrier-recombination-and-lifetime effects. This study has revealed that the high back surface field layer used improves the conversion efficiency by $$\sim$$ ∼ 80%. Moreover, conserving the NW radial shell as a low thickness layer can efficiently reduce the NW sidewall recombination effect. The PCE and short circuit current were determined to be equal to 18.5% and 33.8 mA$$/\hbox {cm}^2$$ / cm 2 for the axial junction proposed. However, the core–shell junction shows figures of 19% and 34.9 mA$$/\hbox {cm}^2$$ / cm 2 . The suggested crescent design offers an enhancement of 23% compared to the conventional NW, for both junctions. For a practical surface recombination velocity of $$10^{2}$$ 10 2 cm/s, the PCE of the proposed design, in the axial junction, has been reduced to 16.6%, with a reduction of 11%. However, the core–shell junction achieves PCE of 18.7%, with a slight reduction of 1.6%. Therefore, the optoelectronic performance of the core–shell junction was marginally affected by the NW surface recombination, compared to the axial junction.

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“…There are several approaches to boron LD, all of which showed that boron LD improves the cell efficiency. [23][24][25] Furthermore, boron LD can be applied with an IR laser and excimer laser to the rear side of PERL cells. [26][27][28][29] In this paper, we propose the fabrication of local boron BSF using NanoGram ® Si paste=ink and LD.…”

Section: Introductionmentioning

confidence: 99%

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

Tomizawa

Imamura

Soeda

et al. 2015

Jpn. J. Appl. Phys.

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Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Siwafer-based solar cells. We produced a printable phosphorus-or boron-doped Si paste (NanoGram ® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram ® Si paste/ink were better than those of the reference cell.

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Boron Laser Doping through High Quality Al2O3 Passivation Layer for Localized B-BSF PERL Solar Cells

Cited by 7 publications

References 13 publications

Review of status developments of high-efficiency crystalline silicon solar cells

Review of status developments of high-efficiency crystalline silicon solar cells

Electrical performance of efficient quad-crescent-shaped Si nanowire solar cell

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

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