Boron Implantation into Si Using B<sub>2</sub>O<sub>3</sub>and B Mixture for Ion Source Material

Shinada, K.; Itoh, Tadatsugu

doi:10.1143/jjap.17.1839

Cited by 2 publications

(1 citation statement)

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“…Here, the common approach utilizes statistical thermal sources which provide a dense ion beam that has to be thinned out by several choppers and apertures. To ensure single ion implantation it is necessary to detect the implantation event by observing the generated Auger electrons, photoluminescence, phonons, electron-hole pairs or changes in the conductance of a field effect transistor [11,12,13,14,15]. Therefore, the implantation only works if either the ions are highly charged or if they are implanted with large kinetic energies.…”

Section: Motivationmentioning

confidence: 99%

Optimised focusing ion optics for an ultracold deterministic single ion source targeting nm resolution

Fickler

Schnitzler

Linke

et al. 2009

Journal of Modern Optics

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Using a segmented ion trap with mK laser-cooled ions we have realised a novel single ion source which can deterministically deliver a wide range of ion species, isotopes or ionic molecules [Schnitzler et al., Phys. Rev. Lett. 102, 070501 (2009)]. Experimental data is discussed in detail and compared with numerical simulations of ion trajectories. For the novel ion source we investigate numerically the influence of various extraction parameters on fluctuations in velocity and position of the beam. We present specialized ion optics and show from numerical simulations that nm resolution is achievable. The Paul trap, which is used as a single ion source, together with the presented ion optics, constitutes a promising candidate for a deterministic ion implantation method for applications in solid state quantum computing or classical nano-electronic devices.

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