Boron-enhanced diffusion of boron from ultralow-energy boron implantation

Agarwal, Aditya; Eaglesham, D. J.; Gossmann, H.‐J.; Pelaz, Lourdes; Herner, S. B.; Jacobson, D.C.; Haynes, T. E.; Erokhin, Yu. E.

doi:10.2172/650277

Cited by 11 publications

(14 citation statements)

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“…Therefore, interstitials emitted from defects in the layer are likely to be recaptured despite the proximity to the surface, and large defects can be formed. These large and stable defects could be the zig-zag ͕113͖ defects showed by Agarwal et al 11 We obtain a superlinear increase in the duration of Si interstitial defects with the implantation dose, as is observed in the experiments too.…”

Section: Bˆ113‰ Defects From Low Energy and High Dose Implantssupporting

confidence: 85%

“…11 For a 5 keV Si implant followed by an anneal at 750°C, the formation of ͕113͖ defects is seen in the experiments in spite of the proximity to the surface. Moreover, a superlinear increase in their size and stability is observed when going from implantation doses of 10 14 -3ϫ10 14 ions/cm 2 .…”

Section: Bˆ113‰ Defects From Low Energy and High Dose Implantsmentioning

confidence: 84%

“…However, even in those cases in which ͕113͖ defects are observed, many controversies are found in the literature about the role of the surface in the interstitial removal from ͕113͖ defects and about the correlation between TED and ͕113͖ defects. [9][10][11][12][13] The role of the silicon surface in the removal of point defects has been investigated by Lim et al 9 These authors have shifted the position of the surface in relation to the damage by the use of chemical etching. Their results indicated that surface proximity reduces TED and the surface behaves as an efficient sink for Si interstitials.…”

Section: Introductionmentioning

confidence: 99%

“…They concluded that ͕113͖ dissolution is controlled by surface annihilation in analogy to TED. The role of the surface in ultrashallow junctions ͑ultralow energy͒ has been investigated by Agarwal et al 11 They have shown that despite the proximity to the surface, large and stable ͕113͖ defects are observed even for 5 keV Si implants. Moller et al 12 suggested that surface is not the limiting factor in the interstitial removal from ͕113͖ defects during the annealing, since the defect layer does not exhibit preferential annihilation closer to the surface.…”

Section: Introductionmentioning

confidence: 99%

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Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

Aboy

Pelaz

Marqués

et al. 2003

Journal of Applied Physics

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Kinetic Monte Carlo simulations are used to analyze the ripening and dissolution of small Si interstitial clusters and {113} defects, and its influence on transient enhanced diffusion of dopants in silicon. The evolution of Si interstitial defects is studied in terms of the probabilities of emitted Si interstitials being recaptured by other defects or in turn being annihilated at the surface. These two probabilities are related to the average distance among defects and their distance to the surface, respectively. During the initial stages of the defect ripening, when the defect concentration is high enough and the distance among them is small, Si interstitials are mostly exchanged among defects with a minimal loss of them to the surface. Only when defects grow to large sizes and their concentration decreases, the loss of Si interstitials through diffusion to the surface prevails, causing their dissolution. The presence of large and stable defects near the surface is also possible when the implant energy is low—small distance to the surface—but the dose is high enough—even smaller distance among defects. The exchange of Si interstitials among defects sets a interstitial supersaturation responsible for the temporary enhancement of the diffusivity of interstitial diffusing dopants. The transitory feature of the enhancement is well correlated to the extinction of the Si interstitial defects.

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Section: Bˆ113‰ Defects From Low Energy and High Dose Implantssupporting

confidence: 85%

Section: Bˆ113‰ Defects From Low Energy and High Dose Implantsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

Aboy

Pelaz

Marqués

et al. 2003

Journal of Applied Physics

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show abstract

“…Moreover, for ultra-low-energy implants, the processes that occur at the surface during annealing, influence the dopant diffusion and the electrical activation. Recently it has been reported that a silicon boride layer located at the silicon surface, injecting interstitials during post-implantation annealing, causes enhanced diffusion of B. Agarwal et al [4] named the phenomenon ''boride enhanced diffusion'' (BED) effect. In this paper, we have tested a diffusion simulation for ultra-low-energy (500 eV) implanted boron in silicon and proposed a new boron diffusion model.…”

Section: Introductionmentioning

confidence: 99%