Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells

Lerat, Jean-François; Desrues, T.; Perchec, Jérôme Le; Coig, Marianne; Milési, F.; Mazen, F.; Michel, Thomas; Roux, Laurent; Veschetti, Y.; Dubois, Sébastien

doi:10.1016/j.egypro.2016.07.046

Cited by 10 publications

(5 citation statements)

References 2 publications

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“…The coating materials and surface treatments are becoming important for tribological applications, repairing the surfaces, protecting the surfaces from conditions of stress and corrosive media, etc. One of the most promising techniques of surface treatment of materials is plasma source ion implantation (PSII), or plasma immersion ion implantation (PIII) [1][2][3][4][5][6]. The PSII method is employed in the material surface processing, manufacturing of large-scale integrated circuits (ICs), and fabrication of semiconductor devices [2,7].…”

Section: Introductionmentioning

confidence: 99%

Time-resolved evolution of collisional transient sheath in plasma source ion implantation

Taghinejad¹,

Niknam²,

Rastkar³

et al. 2021

Phys. Scr.

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In this work, an analytical model for the time-resolved dynamics of the collisional transient sheath in the plasma source ion implantation (PSII) process is developed. The presented model can forecast the temporal dependence of the implanted ion flux and sheath width in the collisional transient sheath.During the PSII process, the effects of some physical parameters such as applied voltage and gas pressure on the pattern of sheath growth are discussed. It is found that the ion flux can get higher values by increasing the gas pressure during the matrix sheath while the dynamics of ions in the expanding sheath are restricted to the collisionality condition, and ion flux is reduced impressively. Moreover, these results are demonstrated that the increase of the applied voltage causes the high rate of sheath expansion and electric field and then ion flux. The final value of the ion velocity in the expanded sheath tends to the ion Bohm velocity.

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Section: Introductionmentioning

confidence: 99%

Time-resolved evolution of collisional transient sheath in plasma source ion implantation

Taghinejad¹,

Niknam²,

Rastkar³

et al. 2021

Phys. Scr.

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“…High open circuit voltage of 695 mV was achieved. After the annealing process, solar cells presented the efficiency of 19.8% [17]. Techniques with laser radiation allow to produce the doping profile accurately by adjusting the laser parameters and selecting an appropriate doping source.…”

Section: Introductionmentioning

confidence: 99%

Analysis of different conductive pastes to form the contact with the boron back surface field in PERT silicon solar cells

Zanesco¹,

Crestani²,

Moehlecke³

et al. 2019

Mater. Res. Express

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The industrial production of solar cells of the PERC family is growing, because the potential to increase the efficiency due to the passivation of the rear face. The PERT solar cell is a cost-effective structure of the PERC configurations. The goal of this paper is to analyze the influence in the electrical parameters of different metal pastes used to form the contact with the boron back surface field of PERT solar cells passivated with silicon dioxide on both sides and developed with a cost-effective process. The boron doped BSF and phosphorus emitter were carried out with reduction of steps. Solar cells were processed with three different conductive pastes: (1) an aluminum paste (PV381), (2) a silver/aluminum paste (PV3N1) and (3) a silver paste (PV51G), with different viscosity and solids content. The pastes were produced by DuPont. The PV381 and PV3N1 pastes produced solar cells with the efficiency of 16.2% and 15.9%, respectively. The higher open circuit voltage was achieved with the aluminum paste, indicating that this paste is more effective to produce the selective back surface field. The PV51G paste is not suitable to form the rear contact.

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“…Outra alternativa é a implantação de íons em imersão em plasma (plasma immersion ion implantation). Esta técnica foi utilizada para produzir células solares de emissor passivado com região posterior totalmente difundida (PERT -passivated emitter rear totally diffused) em silício tipo n a partir do diborano (B 2 H 6 ) (Lerata et al, 2016).…”

Section: Introductionunclassified

Desenvolvimento Da Célula Solar Com Maior Eficiência No Brasil Com Processo Industrial

Zanesco,

Crestani,

Moehlecke

et al. 2019

RBENS

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Nas células solares de silício cristalino fabricadas pela indústria o campo retrodifusor de alumínio é homogêneo e resulta em abaulamento da célula solar além de não permitir a passivação a face posterior. Uma alternativa é formar o campo retrodifusor seletivo de boro e alumínio na face posterior, que possibilita passivar as duas superfícies da célula solar. Desta forma, a recombinação dos portadores de carga minoritários pode ser reduzida e, consequentemente, aumenta-se a eficiência. O objetivo deste trabalho é apresentar o processo de fabricação da célula solar de silício com maior eficiência desenvolvida no Brasil e analisar os parâmetros elétricos, a eficiência quântica interna e a refletância de dispositivos com e sem passivação com dióxido de silício, produzidos após a otimização dos parâmetros de processamento. Apresentam-se as etapas do processo desenvolvido para a fabricação de células solares com campo retrodifusor seletivo de boro e alumínio bem como quais os parâmetros de processo que foram otimizados. Constatou-se que todos os parâmetros elétricos melhoraram com a passivação proporcionada pela camada de SiO2 e a eficiência média subiu de (16,0 ± 0,2) % para (16,9 ± 0,3) %. O fator de forma médio foi de (0,78 ± 0,02). A densidade de corrente de curto-circuito média aumentou 0,6 mA/cm2 com o crescimento da camada de SiO2. No entanto, a tensão de circuito aberto média, de (596,6 ± 2,6) mV, foi o parâmetro que mais aumentou. A eficiência quântica interna indicou que a camada de SiO2 passiva eficazmente o emissor de fósforo. Como resultado, foi produzida a célula solar com maior eficiência no Brasil de 17,3 %, com um processo facilmente adaptado à indústria atual de células solares.

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Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells

Cited by 10 publications

References 2 publications

Time-resolved evolution of collisional transient sheath in plasma source ion implantation

Time-resolved evolution of collisional transient sheath in plasma source ion implantation

Analysis of different conductive pastes to form the contact with the boron back surface field in PERT silicon solar cells

Desenvolvimento Da Célula Solar Com Maior Eficiência No Brasil Com Processo Industrial

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