2021
DOI: 10.1016/j.apcatb.2020.119538
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Boron doping induced charge transfer switching of a C3N4/ZnO photocatalyst from Z-scheme to type II to enhance photocatalytic hydrogen production

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Cited by 357 publications
(134 citation statements)
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“…They observed that boron doped ZnO illustrates type 2 alignment of band structures whereas undoped ZnO exhibits z-scheme band. Due to this dramatic change in band structures, boron-doped ZnO shows a 2.9-times higher H 2 production rate than undoped ZnO [ 31 ]. The reason for excellent photocatalytic activity of nZnO is the formation of ROS.…”
Section: Synthesis Of Nzno and Coating Process On Textilesmentioning
confidence: 99%
See 1 more Smart Citation
“…They observed that boron doped ZnO illustrates type 2 alignment of band structures whereas undoped ZnO exhibits z-scheme band. Due to this dramatic change in band structures, boron-doped ZnO shows a 2.9-times higher H 2 production rate than undoped ZnO [ 31 ]. The reason for excellent photocatalytic activity of nZnO is the formation of ROS.…”
Section: Synthesis Of Nzno and Coating Process On Textilesmentioning
confidence: 99%
“…As a semiconductor, ZnO has high thermal conductivity, high exciton binding energy (60 m eV), high electron mobility and wide band gap, i.e., 3.2–3.4 eV [ 19 ]. The potential of photocatalytic activity of nZnO expands its scope in biomedical [ 20 ], industrial [ 21 , 22 ], catalysis [ 23 , 24 ], coatings [ 25 , 26 ], sensors [ 27 , 28 ], textiles [ 29 , 30 ] and energy conversion devices, i.e., fuel and solar cells [ 31 ]. nZnO has also been used in personal (sunscreen) and beauty care (cosmetics) products due to excellent ultraviolet (UV) absorption properties.…”
Section: Introductionmentioning
confidence: 99%
“…Based on the review, various strategies have been proposed based on g-C 3 N 4 , including electronic structure modulation, crystal structure engineering, nanostructure and heterostructure construction. 8,[21][22][23][24][25] The construction of g-C 3 N 4 -based heterojunction can help the separation of charges at the interface, as a variety of g-C 3 N 4 -based heterojunctions has been reported, such as TiO 2 /g-C 3 N 4 , 26,27 ZnO/g-C 3 N 4 , 28,29 36 etc. MoO 3 has a large band gap of 3 eV and a high dielectric constant of 6-18, suitable for constructing heterojunction photocatalysis with g-C 3 N 4 .…”
Section: Introductionmentioning
confidence: 99%
“…TiO 2 and ZnO are important semiconductor materials that are widely used in fields such as solar cells [1,2], photocatalysis [3], and environmental restoration. However, photocatalysts have low solar utilization and poor photoelectron and hole stability [4].…”
Section: Introductionmentioning
confidence: 99%