Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Zeng, Xiangbin; Wen, Xixing; Sun, X.; Liao, Wugang; Wen, Yangyang

doi:10.1016/j.tsf.2015.11.023

Cited by 16 publications

(8 citation statements)

References 21 publications

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“…However, n-ZnO has been found to have applications in several optoelectronic devices, such as photovoltaic cells [1]. Since the proposed use of n-ZnO as an emitter layer and antireflection (AR) coating, several researchers have employed n-ZnO thin films to fabricate potentially high efficiency and low-cost solar cells [2][3][4]. Apart from several other properties which make ZnO a unique wide bandgap material, its bandgap and electron affinity can be tuned over a large range by doping or alloying.…”

Section: Introductionmentioning

confidence: 99%

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

et al. 2019

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For further uptake in the solar cell industry, n-ZnO/p-Si single heterojunction solar cell has attracted much attention of the research community in recent years. This paper reports the influence of bandgap and/or electron affinity tuning of zinc oxide on the performance of n-ZnO/p-Si single heterojunction photovoltaic cell using PC1D simulations. The simulation results reveal that the open circuit voltage and fill factor can be improved significantly by optimizing valence-band and conduction-band off-sets by engineering the bandgap and electron affinity of zinc oxide. An overall conversion efficiency of more than 20.3% can be achieved without additional cost or any change in device structure. It has been found that the improvement in efficiency is mainly due to reduction in conduction band offset that has a significant influence on minority carrier current.

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Section: Introductionmentioning

confidence: 99%

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

et al. 2019

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“…5 (b)) so as to make higher level EC offset leading to the occurring of fluent charge transfer, this is in a good consistence with the band gap narrowing, which is considered as an important key factor of the good conversion yield in solar cells. This effect was highlighted by some researchers who have used n-ZnO thin films to make potentially high-efficiency and low-cost solar cells [42][43][44]. Also in some other work, a nickel (Ni)-doped ZnO film was prepared by spray pyrolysis, and the optical band gap was reduced from 3.47 eV for un-doped ZnO film to 2.87 eV for 15% Ni-doped film [45].…”

Section: Charge Carrier Effect On Schottky Contact Barriermentioning

confidence: 98%

CNTs modified ZnO and TiO₂ thin films: The effect of loading rate on band offset at metal / semiconductor interfaces

et al. 2022

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ZnO and TiO2 are direct wide band gap semiconductors with intriguing properties. A wide range of applications makes it one of the most studied materials in the past decade, particularly when elaborated as nanostructures. In this work, we focus on synthesis of CNTs modified ZnO and TiO2 thin films using sol-gel method. The morphological and optical characterizations of the based ZnO and TiO2 films were carried out using scanning and transmission electron microscopy (SEM and TEM), XRD and UV spectroscopy. Electrical properties of the deposited ZnO/CNTs and CNTs /TiO2 were studied using I-V measurements at room temperature in metal/semiconductor/metal configuration, by the use of an array of metallic micro-electrodes deposited on the surface of the elaborated thin films. This allows determining qualitatively the electrical conductivity of thin films and the different parameters of the Schottky junction between the composites nano-films and the substrate. This study is necessary for future applications in solar cell.

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“…In-free ZnO-based TCO material has attracted great attention due to its low cost and low growth temperature. The optical band gap ( E g ) of ZnO (∼3.3 eV) is smaller than that of ITO (∼3.6 eV). , Since MgO has a wide band gap (∼6.7 eV), Mg can be introduced into ZnO as a dopant to increase the E g and thus improve optical transmission in the UV region. , On the other hand, group III elements such as B, ,− Al, − Ga, − and In , are commonly used for doping so as to ameliorate the electrical conductivities of ZnO films. The electrical properties of the doped ZnO films are improved while high visible transmittances are maintained.…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, ZnO-based TCO films have been applied in SHJ solar cells. Zeng et al made boron-doped zinc oxide (BZO) films via metal–organic chemical vapor deposition and applied BZO films in an SHJ solar cell with an efficiency of 17.78% . Hsiao et al used low pressure chemical vapor deposition (LPCVD) to grow high-textured 1.6-μm-thick BZO films for SHJ solar cells and achieved a power conversion efficiency of 16.30% .…”

Section: Introductionmentioning

confidence: 99%

“…There are various methods to fabricate ZnO-based TCO thin films for optoelectronic devices (like solar cells), including magnetron sputtering, − metal organic chemical vapor deposition, ,, pulsed laser deposition, ,− and the sol–gel method. ,, However, these deposition methods require high growth temperatures or postannealing treatment to produce high-quality ZnO-TCO films. In addition, ion bombardment during sputtering can damage the properties of as-grown functional layers in solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Innovative Wide-Spectrum Mg and Ga-Codoped ZnO Transparent Conductive Films Grown via Reactive Plasma Deposition for Si Heterojunction Solar Cells

Zhou

Zhang

Chen

et al. 2020

ACS Appl. Energy Mater.

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In this work, wide-spectrum Mg and Ga-codoped ZnO (MGZO) transparent conductive films are developed via a reactive plasma deposition (RPD) technique with a soft thin-film growth process. MGZO film with a work function of ∼4.36 eV can be achieved within 12 min without any intentional substrate-heating treatment. The 480 nm-thickness MGZO film exhibits a low resistivity of ∼9.9 × 10–4 Ω cm and a high transmittance of ∼82.6% in the UV–vis–NIR region (λ approximately 400 nm–1200 nm). XRD spectra show that MGZO films exhibit (103) preferred orientation as the film thickness increases. A silicon heterojunction (SHJ) solar cell based on 480 nm-thick MGZO at the front side is completed. Excellent continuity of the MGZO film is proven by the cross-sectional SEM images, and there are no cracks and pinholes on the top or bottom of the c-Si pyramids. Further efficiency improvements are achieved using an ultrathin SnO x buffer layer with an ameliorated p-a-Si:H/TCO interface. Also, a silicon heterojunction (SHJ) solar cell using MGZO films on both sides is achieved with a conversion efficiency of 19.02%. These experimental results demonstrate that low-cost RPD-grown MGZO TCO materials could be commercially appropriate replacements for the conventional In2O3-based materials commonly used in SHJ solar cells and other optoelectronic devices.

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Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Cited by 16 publications

References 21 publications

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

CNTs modified ZnO and TiO₂ thin films: The effect of loading rate on band offset at metal / semiconductor interfaces

Innovative Wide-Spectrum Mg and Ga-Codoped ZnO Transparent Conductive Films Grown via Reactive Plasma Deposition for Si Heterojunction Solar Cells

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Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Cited by 16 publications

References 21 publications

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

CNTs modified ZnO and TiO2 thin films: The effect of loading rate on band offset at metal / semiconductor interfaces

Innovative Wide-Spectrum Mg and Ga-Codoped ZnO Transparent Conductive Films Grown via Reactive Plasma Deposition for Si Heterojunction Solar Cells

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CNTs modified ZnO and TiO₂ thin films: The effect of loading rate on band offset at metal / semiconductor interfaces