Boron diffusion in strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi mathva

Moriya, N.; Feldman, L. C.; Luftman, H. S.; King, C. A.; Bevk, J.; Freer, B. S.

doi:10.1103/physrevlett.71.883

Cited by 120 publications

(53 citation statements)

References 22 publications

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“…The influence of biaxial stress on the diffusivity has been characterized experimentally [2][3][4][5][6][7][8] by the apparent change in activation energy with biaxial (tensile) strain, ε biax , at constant composition: Additionally, one must take care to isolate experimentally the stress effect from the composition effect;…”

Section: Resultsmentioning

confidence: 99%

“…heterojunction bipolar transistors for high-power and high-speed applications such as wireless communications. The study of stress effects on diffusion, which have only recently been characterized experimentally [2][3][4][5][6][7][8], is an important part of the study of the stability of such strainedlayer epitaxial materials. Additionally, although bulk wafers cannot sustain significant nonhydrostatic stresses at diffusion temperatures, such stresses are sustained near interfaces with patterned films and in the films themselves.…”

Section: Introductionmentioning

confidence: 99%

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Stress effects on defects and dopant diffusion in Si

Aziz

2001

Materials Science in Semiconductor Processing

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The effects of stress on equilibrium point defect populations and on dopant diffusion for single crystals free of extended defects are reviewed. The thermodynamic relationships presented permit the direct comparison of hydrostatic and biaxial stress experiments and of atomistic calculations under hydrostatic and nonhydrostatic stress for any proposed mechanism. Experiments on the effects of pressure and stress on the diffusivity are reviewed. For Sb in Si, using as input the measured effect of hydrostatic pressure on diffusion and the assumption of a pure vacancy mechanism, the measured effect of biaxial stress on diffusion can be predicted successfully with no free parameters. For B inSi, an apparent discrepancy between the hydrostatic and biaxial stress effects exists assuming a pure interstitial-based mechanism. The requirements to permit the prediction of the effect of an arbitrary stress state on diffusion in an arbitrary direction are discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Stress effects on defects and dopant diffusion in Si

Aziz

2001

Materials Science in Semiconductor Processing

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“…V* is therefore the sum of the three diagonal elements of the activation strain tensor 2 . The activation volume can also be written as the pressure-derivative of the Gibbs free energy of activation:…”

Section: +Vmentioning

confidence: 99%

“…The study of stress effects on diffusion, which have been characterized experimentally starting a decade ago [2][3][4][5], is important for understanding the processing and stability of strained Si and Si-Ge films. Additionally, although bulk wafers cannot sustain significant nonhydrostatic stresses at diffusion temperatures, such stresses are sustained near interfaces with patterned films and in the films themselves.…”

Section: Introductionmentioning

confidence: 99%

Dopant diffusion under pressure and stress

Aziz

2003

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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Abstract-The effects of stress on equilibrium point defect populations and on dopant diffusion in strained semiconductors are reviewed. The thermodynamic relationships presented permit the direct comparison of hydrostatic and biaxial stress experiments and of atomistic calculations of defect volumetrics for any proposed mechanism. Experiments on the effects of pressure and stress on the diffusivity of B and Sb are reviewed. The opposite effects of hydrostatic compression and of biaxial compression on the diffusivity are a consequence of the non-local nature of the point defect formation volume. Comparisons between these effects are made to determine quantitatively the anisotropy of the migration volume. The requirements to permit the prediction of the effect of an arbitrary stress state on diffusion in an arbitrary direction are discussed.

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“…6 Lombardo et al 6 have studied npn transistors fabricated by ion beam synthesis and found that the boron diffusion was slower than in silicon, in agreement with work on Si 1Ϫx Ge x epitaxial layers. [1][2][3] Pnp transistors are also of interest for complementary bipolar circuits, and ion beam synthesis of Si 1Ϫx Ge x would offer the prospect of improving the performance of the pnp transistor, which is inferior to that of the npn transistor.…”

Section: Introductionmentioning

confidence: 99%

Comparison of arsenic diffusion in Si1−xGex formed by epitaxy and Ge+ implantation

Mitchell

Ashburn

Bonar

et al. 2003

Journal of Applied Physics

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A comparison is made of arsenic diffusion in Si 0.95 Ge 0.05 produced by epitaxy and ion beam synthesis using a 2ϫ10 16 cm Ϫ2 Ge ϩ implant into silicon. The arsenic diffusion depth at 1025°C in the Si 0.95 Ge 0.05 epitaxy sample is enhanced by a factor of 1.26 compared with a similar Si control sample and by a factor of 1.30 in the ion beam synthesized sample. The arsenic diffusion in the Si 0.95 Ge 0.05 epitaxy sample is modeled by increasing the arsenic diffusion coefficient from the Si value of 1.92ϫ10 Ϫ15 to 5.15ϫ10 Ϫ15 cm 2 s Ϫ1 , and in the ion beam synthesized sample by using the same diffusion coefficient of 5.15ϫ10 Ϫ15 cm 2 s Ϫ1 and increasing the ''plus one'' factor in the transient enhanced diffusion model from 0.01 to 1.5. Arsenic diffusion in a silicon sample implanted with 2ϫ10 15 cm Ϫ2 Si ϩ can be modeled using the same plus one factor of 1.5, thereby demonstrating the consistency of the modeling.

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Boron diffusion in strainedSi1−xGe

Cited by 120 publications

References 22 publications

Stress effects on defects and dopant diffusion in Si

Stress effects on defects and dopant diffusion in Si

Dopant diffusion under pressure and stress

Comparison of arsenic diffusion in Si1−xGex formed by epitaxy and Ge+ implantation

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