Boron and Phosphorus Removal During High Purity Hypereutectic Al–Si Solidification

Li, Yanlei; Chen, Jian

doi:10.1007/s12540-019-00347-7

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…[19] Nowadays, up to 0.2 ppmw of phosphorus in Si is accepted as the limit for SoG-Si production, which could be reduced in the future if higher efficiencies are required. [20] Many research works have been carried out in the recent years on removal of P from Si, [8,9,[21][22][23][24][25][26][27][28] and many of them were focused on vacuum refining. [1,4,5,12,[29][30][31][32][33][34][35][36][37] According to literature and our previous works, vacuum refining of Si is one of the most efficient and clean methods for the complete removal of phosphorus from Si.…”

Section: Introductionmentioning

confidence: 99%

On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

Hoseinpur

Sergeev

Müller

et al. 2022

Metall Mater Trans B

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Silicon refining for solar applications is intensively on demand, and removal of phosphorus from Si is one of the most challenging steps. Evaporation of P from liquid Si in a vacuum refining process is the most efficient method for P removal from Si, and this research deals with the insight mechanisms of P evaporation from liquid Si. In this research, the gaseous species evaporating from the dilute liquid solutions of phosphorus in silicon were studied experimentally, and it was shown that phosphorus evaporates in the form of P, P2, P4, P3, SiP, Si2P, Si3P, and SiP2 at elevated temperatures. Except P and P2, the other molecules were detected experimentally for the first time, and Si3P was detected as a new compound in the gas phase. Knudsen effusion mass spectrometry technique was applied to characterize the evaporation of phosphorus from liquid Si samples containing 100, 1250, and 3000 ppmw phosphorus. The evaporation of phosphorus from liquid Si was studied by isothermal and polythermal experiments, up to 1840 °C. The vapor pressures of various P-containing molecules (P, P2, P4, SiP, Si2P) at 1442 °C were measured as a function of phosphorus fraction in liquid silicon. Results indicated that a major part of the phosphorus evaporates in the form of silicon phosphides and P4, especially when the sample temperature exceeds 1750 °C. When initial phosphorus was 100 ppmw, about 71 pct of phosphorus evaporation was by means of silicon phosphides and P4. The mechanisms of phosphorus evaporation from liquid Si are proposed, which depend on the melt composition and temperature. It occurs through phosphorus species evaporation independently or via the decomposition of transient silicon phosphides at the surface or through the direct evaporation of silicon phosphides at the melt surface.

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Section: Introductionmentioning

confidence: 99%

On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

Hoseinpur

Sergeev

Müller

et al. 2022

Metall Mater Trans B

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“…As semiconductor materials, silicon and its alloys have attracted extensive attention due to their unique characteristics in electronics and new energy industries [1][2][3][4][5]. However, their mechanical properties mainly depend on the morphology of the silicon phase.…”

Section: Introductionmentioning

confidence: 99%

Critical undercooling of growth mode transition in undercooled Al-80%Si-1.0%P alloy

Dang

Jian

2022

Materials Science and Technology

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Herein, the critical undercooling of growth mode transitions in highly undercooled Al-80%Si-1.0%P alloys were investigated by high-speed video to observe and record the growth process. Under low undercooling, the dendrites with special edges of primary silicon solidify from the undercooled melt and show lateral growth characteristics. As undercooling increases, the primary silicon grows as blocky and dendritic shapes, indicating mixed growth characteristics. With sufficiently high undercooling, the sample's surface exhibits the equiaxed primary silicon and shows non-lateral growth characteristics. The experimentally determined critical undercooling for the growth mode transition of primary silicon in undercooled Al-80%Si-1.0%P alloys are 125 and 225 K, and are consistent with the theoretically predicted values, 112 and 208 K, respectively.

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Effect of mechanical stirring on silicon purification during Al-Si solvent refining

Chen

2021

Journal of Crystal Growth

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Boron and Phosphorus Removal During High Purity Hypereutectic Al–Si Solidification

Cited by 3 publications

References 16 publications

On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

On the Phosphorus Evaporation from Liquid Silicon by Knudsen Effusion Mass Spectrometry

Critical undercooling of growth mode transition in undercooled Al-80%Si-1.0%P alloy

Effect of mechanical stirring on silicon purification during Al-Si solvent refining

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