Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

Aboy, María; Pelaz, Lourdes; Barbolla, J.; Duffy, Ray; Venezia, V. C.

doi:10.1016/j.mseb.2005.08.067

Cited by 9 publications

(7 citation statements)

References 27 publications

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“…In Fig. 2, the necessity to correct the recrystallization velocity is in agreement with previous experimental studies 10–15. The presence of indium in the a‐Si leads to an acceleration of the average SPER velocity during thermal annealing.…”

Section: Discussionsupporting

confidence: 88%

“…A low temperature anneal induces SPER of the amorphous layer with little thermal diffusion and high electrical activation level of dopants 2–8. Dopant redistribution during SPER is mainly driven by three phenomena; diffusion in amorphous phase 8, 9, partition effect (or “snow plough”) at a/c interface 10, gradient of interstitials toward the silicon surface due to EOR region 11. Moreover, as observed for boron, dopant clustering may occur in the amorphous phase and such immobile clusters can then be incorporated in the crystalline matrix during SPER 12, 13.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions

Delalleau

Pakfar

Bazizi

et al. 2010

Physica Status Solidi (a)

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Solid‐phase‐epitaxial regrowth (SPER) of Si amorphized by ion implantation is considered as a potential solution for the fabrication of highly‐activated ultra‐shallow junctions for future technology nodes of Si CMOS devices. In the frame of 32 and 22 nm technologies node development, SPER occurs after amorphizing implantations used in source/drain regions. To get an accurate simulation of dopant activation and junction depth position, a suitable continuum SPER model, implemented into a commercial simulator, is now mandatory. This TCAD model must consider the different physical effects associated with SPER: silicon regrowth rate, dopants redistribution snow plough effect, and interaction with silicon point defects. In this work, using a previously established model, we have implemented an improved physically based model for SPER and, several formulations have been developed to enable a robust/accurate modeling of the recrystallization velocity. It takes into account the direct interaction between amorphous/crystalline interface kinetics and point defects, and a regrowth rate dependent on temperature. Simulation results of dopant concentration profiles are in good agreement with experimental data and can provide important insight for optimizing the bulk silicon process as well in one dimension as two dimensions.

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Section: Discussionsupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions

Delalleau

Pakfar

Bazizi

et al. 2010

Physica Status Solidi (a)

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“…Alternatively, boron can form interstitial clusters which can render many boron atoms inactive within silicon . These clusters have the ability to dissolve at temperatures >850°C . In addition, the manufacturing environment can also lead to boron deactivation, as in the case of hydrogen saturating one of the four tetrahedral silicon bonds .…”

Section: Resultsmentioning

confidence: 99%

Residual stress determination of silicon containing boron dopants in ceramic matrix composites

et al. 2018

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Raman spectroscopy was utilized to investigate residual stresses found within a SiC/SiC ceramic matrix composite containing Hi-Nicalon ™ fibers, a slurry meltinfiltrated matrix of silicon carbide particles, and silicon matrix. Large gradients of electrically active boron are found throughout various regions within the crystalline lattice of the silicon matrix. The regions were identified by the varying degrees of asymmetry and peak width measured in the resonant Fano profile of the doped silicon. A methodology to determine the residual stress state of silicon exhibiting varying degrees of electrically active boron is presented by utilizing the changes in the Raman profile parameters. Previous works on similar SiC/SiC CMCs have attributed spatial gradients in the wavenumber to large fluctuations in stress. By applying the proposed methodology, we show that these observations are related to active boron that is segregated in various matrix areas. Utilizing this methodology, mean compressive stresses in various silicon regions were found to be approximately 300 MPa, with complementary tensile silicon carbide particle stresses of approximately 300 MPa.

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“…The evolution of EOR defects also influences the temporal behavior of X j and R s , sometimes in complicated ways. 53 Such effects probably account for the change in rate at which X j evolves at >15 min in Figure 4.…”

Section: Consequences Of Interface Effects For Broad Dopant Peaks-mentioning

confidence: 97%

Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon

Kondratenko

Seebauer

2013

ECS J. Solid State Sci. Technol.

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Recent work has demonstrated the existence of nonthermal illumination effects on the diffusion of boron, arsenic, and isotopic silicon ion-implanted into silicon for ultra-shallow junction applications. In some cases, the degree of electrical activation is affected as well. The effects arise from super-bandgap light's direct action on bulk point defects via changes in their charge state. By contrast, the present work demonstrates the existence of a distinct mechanism whereby light acts indirectly on bulk defects via changes at a nearby interface. The changes occur in interfacial annihilation probability and/or electric potential, and affect the efficiency with which the interface absorbs point defects emitted by extended end-of-range defects during annealing.Formation of shallow pn junctions for integrated circuits requires ion implantation of dopants followed by annealing to reduce implantation damage and to promote electrical activation of the dopants. Annealing technology relies upon rapid heating by incandescent lamps, flash lamps or lasers. 1 The optical stimulation was long thought to supply heating alone, although scattered experimental evidence had hinted at additional nonthermal influences on diffusion and activation of phosphorous, 2 arsenic, 3-5 and boron. 4,6-8 However, the experiments were difficult to interpret reliably because lamps supplied the heating, thereby complicating the decoupling of heating and photostimulation effects. Some progress was achieved in quantifying photoenhanced diffusion in II-VI semiconductors (using computational methods) 9 and a-Si:H (experimentally), 10 yet the understanding of the photostimulated dopant diffusion in c-Si remained inadequate. This laboratory has employed a novel experimental configuration to eliminate the ambiguity, and has thereby demonstrated the influences of low-intensity (<1 W/cm 2 ) super-bandgap illumination − first on the surface diffusion of various adsorbates on Si, 11,12 and subsequently on the bulk self-diffusion of Si 13,15 as well as the bulk diffusion and electrical activation of As and B implanted into silicon. 14 As first suggested for surface diffusion 11,12,15,16 and later modeled quantitatively for bulk Si self-diffusion, 13 photostimulation can influence diffusional flux rates by changing the average electrical charge state of point defects involved with diffusion, although the exact mechanism depends upon the specific case. For surface diffusion of Group III, IV and V elements on Si, the mass flux is carried by adatoms that can be rendered immobile by substitution into the top layer of the substrate. Escape from this substitutional state leaves behind a surface vacancy that can take on a variety of charge states depending upon the local concentrations of electrons and holes. Photostimulation exerts its influence by changing these carrier concentrations, which propagates into the average charge state of the vacancies, then into the effective formation energy for creating an adatom and vacancy, and finally into the concentration of ad...

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Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

Cited by 9 publications

References 27 publications

Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions

Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions

Residual stress determination of silicon containing boron dopants in ceramic matrix composites

Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon

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