Boosting the thermoelectric performance of n-type Bi2S3 by hierarchical structure manipulation and carrier density optimization

Ji, Wenting; Shi, Xiao‐Lei; Liu, Wei‐Di; Yuan, Hualei; Zheng, Kun; Wan, Biao; Shen, Weixia; Zhang, Zhuangfei; Fang, Chao; Wang, Qianqian; Chen, Liangchao; Zhang, Yuewen; Jia, Xiaopeng; Chen, Zhigang

doi:10.1016/j.nanoen.2021.106171

Cited by 40 publications

(23 citation statements)

References 63 publications

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“…The calculated band gap of the pristine material is ∼1.25 eV, which is in good agreement with the reported experimental values of ∼1.3 eV. 35 , 49 , 50 Both spin-up and spin-down states showed reduced values of ∼0.6 and ∼0.92 eV, respectively. The reduction in the band gap for the spin-up state was due to the presence of an additional impurity band.…”

Section: Resultssupporting

confidence: 89%

Thermoelectric Performance of n-Type Magnetic Element Doped Bi₂S₃

Fortulan

Yamini

Nwanebu

et al. 2022

ACS Appl. Energy Mater.

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Thermoelectric technology offers great potential for converting waste heat into electrical energy and is an emission-free technique for solid-state cooling. Conventional high-performance thermoelectric materials such as Bi 2 Te 3 and PbTe use rare or toxic elements. Sulfur is an inexpensive and nontoxic alternative to tellurium. However, achieving high efficiencies with Bi 2 S 3 is challenging due to its high electrical resistivity that reduces its power factor. Here, we report Bi 2 S 3 codoped with Cr and Cl to enhance its thermoelectric properties. An enhanced conductivity was achieved due to an increase in the carrier concentration by the substitution of S with Cl. High values of the Seebeck coefficients were obtained despite high carrier concentrations; this is attributed to an increase in the effective mass, resulting from the magnetic drag introduced by the magnetic Cr dopant. A peak power factor of 566 μW m –1 K –2 was obtained for a cast sample of Bi 2– x /3 Cr x /3 S 3– x Cl x with x = 0.01 at 320 K, as high as the highest values reported in the literature for sintered samples. These results support the success of codoping thermoelectric materials with isovalent magnetic and carrier concentration tuning elements to enhance the thermoelectric properties of eco-friendly materials.

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Section: Resultssupporting

confidence: 89%

Thermoelectric Performance of n-Type Magnetic Element Doped Bi₂S₃

Fortulan

Yamini

Nwanebu

et al. 2022

ACS Appl. Energy Mater.

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“…Due to the effectively optimized PF by Pt 1 single atoms and low κ tot , a maximum zT value of ∼0.75 is obtained at 823 K for Bi 2 S 3 – 0.5 wt % Pt 1 . This zT is also among the best state-of-the-art Bi 2 S 3 materials (Figure b) and other n-type environmentally friendly metal sulfides. ,,− The average zT (eq S6) of our Bi 2 S 3 –0.5 wt % Pt 1 sample is 0.39 from 323 to 823 K. The calculated efficiency η (eq S7) is 6.9%. All the results promise Bi 2 S 3 –Pt 1 as a type of high-performance thermoelectric material.…”

mentioning

confidence: 66%

Mass Production of Pt Single-Atom-Decorated Bismuth Sulfide for n-Type Environmentally Friendly Thermoelectrics

Zhao

Jin

et al. 2022

Nano Lett.

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Single-atom materials are widely explored in catalysis, batteries, sensors, etc. However, limited by mass production and centimeter-scale assembly, they are rarely studied in thermoelectrics. Herein, we demonstrate a solvothermal synthesis assisted by a syringe-pump method to yield Bi 2 S 3supported Pt single-atom materials (Bi 2 S 3 −Pt 1 ) at a 10 g scale. Different from Pt n clusters, Pt 1 single atoms can increase carrier concentration at a high doping efficiency and provide a unique atomic environment to enhance carrier mobility, and an enlarged effective mass leads to an enhanced Seebeck coefficient. As a result, a high power factor (348 μW m −1 K −2 ) is achieved at 823 K. Benefiting from the scattering of phonons by Pt 1 atomic sites, a minimum thermal conductivity of 0.37 W m −1 K −1 is achieved. Consequently, the Bi 2 S 3 −0.5 wt % Pt 1 realizes a record-high zT of ∼0.75 at 823 K, being among the best in the state-of-the-art n-type environmentally friendly metal sulfides. The enhancement of the carrier mobility and suppression of the thermal conduction by the unique Pt 1 single atoms will inspire various fields, as exemplified by electronic devices and thermal management.

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“…Halogens are well-known n-type dopants for the Bi 2 X 3 family (X = Te, Se, and S), with defects in Cl x , Br x , or I x providing free electrons to increase carrier concentrations [ 31 , 32 ]. Aside from Br doping, the effect of single Cl or I doping on TE transport properties of Bi 2 SeS 2 has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Optimized Thermoelectric Properties of Sulfide Compound Bi2SeS2 by Iodine Doping

et al. 2022

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The Te-free compound Bi2SeS2 is considered as a potential thermoelectric material with less environmentally hazardous composition. Herein, the effect of iodine (I) substitution on its thermoelectric transport properties was studied. The electrical conductivity was enhanced due to the increased carrier concentration caused by the carrier provided defect Ise. Thus, an enhanced power factor over 690 μWm−1K−2 was obtained at 300 K by combining a moderate Seebeck coefficient above 150 µV/K due to its large effective mass, which indicated iodine was an effective n-type dopant for Bi2SeS2. Furthermore, a large drop in the lattice thermal conductivity was observed due to the enhanced phonon scattering caused by nanoprecipitates, which resulted in a low total thermal conductivity (<0.95 Wm−1K−1) for all doped samples. Consequently, a maximum ZT value of 0.56 was achieved at 773 K for a Bi2Se1−xIxS2 (x = 1.1%) sample, a nearly threefold improvement compared to the undoped sample.

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Boosting the thermoelectric performance of n-type Bi2S3 by hierarchical structure manipulation and carrier density optimization

Cited by 40 publications

References 63 publications

Thermoelectric Performance of n-Type Magnetic Element Doped Bi₂S₃

Thermoelectric Performance of n-Type Magnetic Element Doped Bi₂S₃

Mass Production of Pt Single-Atom-Decorated Bismuth Sulfide for n-Type Environmentally Friendly Thermoelectrics

Optimized Thermoelectric Properties of Sulfide Compound Bi2SeS2 by Iodine Doping

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Boosting the thermoelectric performance of n-type Bi2S3 by hierarchical structure manipulation and carrier density optimization

Cited by 40 publications

References 63 publications

Thermoelectric Performance of n-Type Magnetic Element Doped Bi2S3

Thermoelectric Performance of n-Type Magnetic Element Doped Bi2S3

Mass Production of Pt Single-Atom-Decorated Bismuth Sulfide for n-Type Environmentally Friendly Thermoelectrics

Optimized Thermoelectric Properties of Sulfide Compound Bi2SeS2 by Iodine Doping

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Thermoelectric Performance of n-Type Magnetic Element Doped Bi₂S₃

Thermoelectric Performance of n-Type Magnetic Element Doped Bi₂S₃