Boosting the thermoelectric performance of GeTe via vacancy control and engineering sintering parameters

Ranganayakulu, V. K.; Chen, Cheng-Lung; Ou, M. N.; Lee, Chih‐Hao; Chen, Yang‐Yuan

doi:10.1016/j.mtcomm.2022.104411

Cited by 3 publications

(3 citation statements)

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“…In addition, Mg [22], Cu [23], Sn [24], and Ag [25] doping can also reduce the carrier concentration and thermal conductivity of GeTe. What is more, the thermoelectric properties of GeTe can also be optimized by adjusting the ratio of Ge to Te; the reason for this is that this method can regulate the Ge vacancy concentration [26]. In the area of energy band engineering, the electronic structure can be adjusted by doping elements such as Ca [22], Cd [27], and Mn [28].…”

Section: Introductionmentioning

confidence: 99%

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Guo,

Zhang,

Nan

et al. 2024

Materials

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GeTe and Ge0.99-xIn0.01SnxTe0.94Se0.06 (x = 0, 0.01, 0.03, and 0.06) samples were prepared by vacuum synthesis combined with spark plasma sintering (SPS). The thermoelectric properties of GeTe were coordinated by multiple doping of Sn, In, and Se. In this work, a maximum zT(zT = S2σT/κ) of 0.9 and a power factor (PF = S2σ) of 3.87 μWmm−1 K−2 were obtained in a sample of Ge0.99In0.01Te0.94Se0.06 at 723K. The XRD results at room temperature show that all samples are rhombohedral phase structures. There is a peak (~27°) of the Ge element in GeTe and the sample (x = 0), but it disappears after Sn doping, indicating that Sn doping can promote the dissolution of Ge. The scattering mechanism of the doped samples was calculated by the conductivity ratio method. The results show that phonon scattering Is dominant in all samples, and alloy scattering is enhanced with the increase in the Sn doping amount. In doping can introduce resonance energy levels and increase the Seebeck coefficient, and Se doping can introduce point defects to suppress phonon transmission and reduce lattice thermal conductivity. Therefore, the thermoelectric properties of samples with x = 0 improved. Although Sn doping will promote the dissolution of Ge precipitation, the phase transition of the samples near 580 K deteriorates the thermoelectric properties. The thermoelectric properties of Sn-doped samples improved only at room temperature to ~580 K compared with pure GeTe. The synergistic effect of multi-element doping is a comprehensive reflection of the interaction between elements rather than the sum of all the effects of single-element doping.

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Section: Introductionmentioning

confidence: 99%

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Guo,

Zhang,

Nan

et al. 2024

Materials

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“…It is also reported that the doping level of GeTe should be in the range of 10 19 cm −3 for achieving higher thermoelectric power [18]. The hole concentration of GeTe can be suppressed by doping excess Ge, Bi, In, Zn, Pb, and Sb [17,19,20]. On the other hand, the carrier type can be alter i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, its thermal resistance is high and cost is low [26]. In addition, its carrier type and carrier concentration can be well controlled by different types of doping in GeTe and its alloys [17,[19][20][21][22][23]. Therefore, these qualities make GeTe a suitable candidate to be used in thermophotovoltaic cells.…”

Section: Introductionmentioning

confidence: 99%

Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell

Abir,

Mondal,

Hossain

2023

Phys. Scr.

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Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been used in phase change memory and thermoelectric power generation. In this article, we study the electronic structure of the GeTe by first-principles calculations. The theoretical direct bandgap of GeTe was found to be 0.69 eV which is very close to the experimental value. Then, we demonstrated a single-junction GeTe thermophotovoltaic (TPV) cell based on device transport model with np structure at the black body and cell temperature of 1775 and 300 K, respectively. The device was optimized for the higher performance of the TPV cell. The GeTe TPV cell exhibited an efficiency of 7.9% with JSC = 16.16 A cm−2, VOC = 0.360 V and FF = 75.51%, respectively. These results indicate that GeTe could be a promising material for the fabrication of efficient TPV cell.

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Self-doping enhancing thermoelectric properties of GeTe thin films

Sun,

Hou,

et al. 2024

Applied Physics Letters

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The thermoelectric film has broad application potential in the self-power supply of miniature electrical equipment. In this work, GeTe thermoelectric films were prepared using physical vapor deposition combined with annealing processes. Benefitting from the high mobility enabled by the increased crystallinity and the optimized carrier concentration via Ge self-doping, the power factor of a GeTe thin film was significantly improved to 18 μW cm−1 K−2 (300 K), and the maximum one (28 μW cm−1 K−2) was achieved at 576 K. Furthermore, thermoelectric thin film devices assembled with high-performance GeTe films exhibited superior output performance at a temperature difference of 40 K. The maximum open circuit voltage reached 12.2 mV and the power density was 2.4 mW cm−2, indicating that GeTe thin films have broad application prospects in the field of self-power supply.

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Boosting the thermoelectric performance of GeTe via vacancy control and engineering sintering parameters

Cited by 3 publications

References 40 publications

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell

Self-doping enhancing thermoelectric properties of GeTe thin films

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