Boosting the thermoelectric performance of misfit-layered (SnS)1.2(TiS2)2 by a Co- and Cu-substituted alloying effect

Yin, Cong; Hu, Qing; Tang, Mingjing; Liu, Hangtian; Chen, Zhiyu; Ang, Ran

doi:10.1039/c8ta08426b

Cited by 22 publications

(22 citation statements)

References 30 publications

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“…It should be pointed out that the ZTs for all the Sb-substituted samples have a comprehensive improvement in both directions and the in-plane ZTs are apparently higher than those of out-of-plane ones under the same conditions (Figure 24h). Notably, the in-plane ZT for the 6% Sb-substituted sample or even the out-of-plane ZT for 6% Sb-substituted one is superior/comparable to currently state-of-the-art misfit-layered chalcogenides, such as Cu-substituted (SnS) 1.2 /(TiS 2 ) 2 composites, [251] (SnS) 1.2 /(TiS 2 ) 2 composites, [252] (BiS) 1.2 /(TiS 2 ) 2 composites, [253,254] [(LaS) x ] 1.14 NbS 2 composites, [255] etc. The texturization engineering provides a new guidance on the improvement of the thermoelectric performance in misfitlayered chalcogenides.…”

Section: Thermoelectricsmentioning

confidence: 92%

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Zhu

et al. 2021

Small Science

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Tin-based binary chalcogenide Sn-X (X ¼ S, Se, Te) compounds have attracted extensive interest in the optical, optoelectronic, catalysis, and flexible systems due to their intriguing performances. [1][2][3][4][5][6][7] The Sn-X (X ¼ S, Se, Te) compounds are typically layered materials and usually have three crystalline phases: hexagonal, monoclinic, and orthorhombic; orthorhombic phase is denoted by chemical formula SnX, and hexagonal and monoclinic phases are labeled as SnX 2 . [8] Until now, SnSe and SnTe compounds have already achieved great progress in many fields, especially for thermoelectronics and ferroelectrics, [9][10][11][12] and many important reviews have been reported on SnSe and SnTe compounds due to their rapid development. [8,[13][14][15][16] For example, in 2020, Chen et al. [14] summarized a comprehensive overview of controlled synthesis, characterization, and thermoelectric performance in SnSe. In 2018, Shi et al. [8] summarized the growth, characterization, and applications (photovoltaics, supercapacitors, rechargeable batteries, phase-change memory devices, and topological insulator) of SnSe. In 2018, Li et al. [15] reviewed the development of SnS, SnSe, and SnTe, mainly focusing on the controllable tuning of the electron and phonon transport as well as the challenges for further optimization and practical applications. Among Sn-X (X ¼ S, Se, Te) compounds, tin monosulfide (SnS) as a typical black phosphorus analogue, has also received intensive scientific attention due to its unique properties, such as inexpensive, sustainable, suitable bandgap between Si (1.12 eV) and GaAs (1.43 eV), [17] high absorption coefficient (10 À4 cm À1 ), [18] strong mechanical properties, and anisotropic optoelectronic, [19][20][21] which are of great value in optoelectronics, catalysis, sensors, and nanomedicines. [7,[22][23][24][25][26][27] In addition, layered SnS with suitable spacing structures hold promising potentials in the field of lithium (Li)-ion batteries and sodium (Na)-ion batteries due to their relatively high electrical conductivity and theoretical capacity. [28][29][30][31][32] However, although popular SnS has achieved great progress in a variety of fields, few comprehensive reviews have hitherto focused on the field of SnS-based nanostructures and their fascinating applications.Inspired by important reviews on SnSe reported by Chen [14] and Li [8] in recent years, we comprehensively summarized the synthesis, characterization, and the latest progress of SnS-based nanostructures, as shown in Figure 1. First, the most commonly employed techniques (hydrothermal, vapor deposition, electrostatic assembly, etc.) for preparing SnS and SnS-based nanostructures are presented in detail with their recent progress. Furthermore, the fundamental properties (crystal structure, electronic band structure, optical property, and Raman spectroscopy) and diverse applications (batteries, solar cells, catalysis, optoelectronics, sensors, ferroelectrics, thermoelectrics, nonlinear properties, and biomedical applicatio...

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Section: Thermoelectricsmentioning

confidence: 92%

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Zhu

et al. 2021

Small Science

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“…The misfit compounds show a phononglass like behavior due to the lattice mismatch between the MX and TX 2 layers. These attractive properties make (MX) 1+x (TX 2 ) m an ideal class of compounds for TE energy conversion applications [112][113][114][115]. The powder of misfit compounds is often prepared by using a solid-liquid-vapor reaction method.…”

Section: Misfit Layered Materialsmentioning

confidence: 99%

“…To improve the TE performance in (MX) 1+x (TX 2 ) m materials, various strategies have been proposed to promote their electrical transport properties [114,[119][120][121], including improving carrier mobility, optimizing carrier concentration, and enhancing DOS distortion. Alternatively, thermal conductivity could be minimized by softening lattice or introducing planar defects (such as translational displacement and stacking faults) [110,115,122].…”

Section: Misfit Layered Materialsmentioning

confidence: 99%

Recent Progress of Two-Dimensional Transition Metal Dichalcogenides for Thermoelectric Applications

et al. 2022

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Two-dimensional transition metal dichalcogenides (2D-TMDs) have sparked immense interest, resulting from their unique structural, electronic, mechanical, and thermal properties. The band structures, effective mass, electron mobility, valley degeneracy, and the interactions between phonons and heat transport properties in 2D-TMDs can be efficiently tuned via various approaches. Moreover, the interdependent electrical and thermal conductivity can be modulated independently to facilitate the thermoelectric (TE)-based energy conversion process, which enables optimization of TE properties and promising TE applications. This article briefly reviews the recent development of TE properties in 2D-TMDs. First, the advantages of 2D-TMDs for TE applications are introduced. Then, the manipulations of electrical and thermal transport in 2D-TMDs are briefly discussed, including various influencing factors such as thickness effect, structural defects, and mechanical strain. Finally, the recent advances in the study of electrical, thermal transport, and TE properties of 2D-TMDs, TE-related applications, the challenges, and the future prospects in this field are reviewed.

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“…Several researchers have attempted to modulate the σ by elemental substitution reactions in the chalcogenide materials. − In the present case, one of the strategies to reduce κ car while maintaining ultralow κ lat is the incorporation of another Group IIIA element into CATS to inherently lower the σ without any harmful effects to the κ lat value. The replacement of Al with Ga in Al-containing chalcogenide semiconductors has been shown to lead to a modulation of the band gap energy, thereby tuning the electrical transport properties .…”

Section: Introductionmentioning

confidence: 99%

Effect of Gallium Substitution in Cu₃Al_1–xGa_xSnS₅ Nanobulk Materials on Thermoelectric Properties

Dwivedi

Miyata

Higashimine

et al. 2020

ACS Appl. Energy Mater.

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Thermoelectric (TE) materials have consistently gained momentum for use in waste heat utilization technology. Recently, we fabricated a Cu3AlSnS5 (CATS) nanobulk by pelletizing chemically synthesized CATS nanocrystals using a pulsed electric current sintering technique and found that it possesses exceptionally low lattice thermal conductivity (κlat). However, the total thermal conductivity of the CATS nanobulk was relatively high because of the high carrier thermal conductivity (κcar) owing to its considerably high electrical conductivity. In this study, the effect of Ga substitution in Cu3Al1–x Ga x SnS5 nanobulk materials on the carrier transport properties of the materials is systematically investigated. The value of the dimensionless figure of merit ZT of the Cu3Al1–x Ga x SnS5 nanobulk at x = 0.5 (ZT = 0.26 at 665 K) was found to be more than twice that of the pristine CATS nanobulk at 665 K, primarily because of the significant reduction in κcar. A detailed analysis of the correlation among transport parameters, crystal structure, and thermoelectric performance of the Cu3Al1–x Ga x SnS5 nanobulks (0.25 ≤ x ≤ 1) revealed that a larger fraction of the zinc blende (ZB) phase leads to a higher power factor. In summary, the Cu3Al0.5Ga0.5SnS5 nanobulk exhibited the highest ZT value in the range of 0 ≤ x ≤ 1 because of its significantly reduced κcar value as compared with the CATS nanobulk. This reduced κcar value is owing to the Ga substitution and the highest ZB phase fraction, resulting in the highest power factor among the Cu3Al1–x Ga x SnS5 nanobulks (0.25 ≤ x ≤ 1).

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Boosting the thermoelectric performance of misfit-layered (SnS)_1.2(TiS₂)₂ by a Co- and Cu-substituted alloying effect

Abstract: The enhancement of thermoelectric performance is directly triggered by a Co- and Cu-substituted alloying effect in misfit-layered (SnS)1.2(TiS2)2.

Cited by 22 publications

References 30 publications

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Recent Progress of Two-Dimensional Transition Metal Dichalcogenides for Thermoelectric Applications

Effect of Gallium Substitution in Cu₃Al_1–xGa_xSnS₅ Nanobulk Materials on Thermoelectric Properties

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Boosting the thermoelectric performance of misfit-layered (SnS)1.2(TiS2)2 by a Co- and Cu-substituted alloying effect

Abstract: The enhancement of thermoelectric performance is directly triggered by a Co- and Cu-substituted alloying effect in misfit-layered (SnS)1.2(TiS2)2.

Cited by 22 publications

References 30 publications

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Recent Progress of Two-Dimensional Transition Metal Dichalcogenides for Thermoelectric Applications

Effect of Gallium Substitution in Cu3Al1–xGaxSnS5 Nanobulk Materials on Thermoelectric Properties

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Product

Resources

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Boosting the thermoelectric performance of misfit-layered (SnS)_1.2(TiS₂)₂ by a Co- and Cu-substituted alloying effect

Effect of Gallium Substitution in Cu₃Al_1–xGa_xSnS₅ Nanobulk Materials on Thermoelectric Properties