Abstract:This manuscript presents an experimental comparative study between the Metal-Oxide-Semiconductor (MOS) Silicon-On-Insulator (SOI) Field Effect Transistors, n-type, (nMOSFETs) matching, which are implemented with the hexagonal gate shape (Diamond) and standard rectangular ones. The main analog parameters and figures of merit of 360 devices are investigated. The results establish that the Diamond SOI MOSFETs with α angles equal to 90o can boost in more than in average -45.8% with a standard deviation of 20.1% th… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.