2013
DOI: 10.1016/j.electacta.2013.07.220
|View full text |Cite
|
Sign up to set email alerts
|

Boosting the cell efficiency of CdSe quantum dot sensitized solar cell via a modified ZnS post-treatment

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
14
0

Year Published

2015
2015
2021
2021

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 49 publications
(16 citation statements)
references
References 28 publications
2
14
0
Order By: Relevance
“…ZnS is commonly used a passivation layer synthesized via SILAR method which effectively suppress electron-hole recombination [162]. In order to suppress electron back transfer from TiO 2 to the electrolyte, coating of sensitized photoanode with SiO 2 blocking layer gives better results [163].…”
Section: Redox Couple and Photoanode Stabilitymentioning
confidence: 99%
“…ZnS is commonly used a passivation layer synthesized via SILAR method which effectively suppress electron-hole recombination [162]. In order to suppress electron back transfer from TiO 2 to the electrolyte, coating of sensitized photoanode with SiO 2 blocking layer gives better results [163].…”
Section: Redox Couple and Photoanode Stabilitymentioning
confidence: 99%
“…The shelf stability of CdSe QDSCs has been reported to be rather poor, with a sharp decrease in performance after relatively short periods (e.g., 80% loss after 3 days). [200,201] The stability was further reduced when the performance of the devices was tracked under continuous illumination. For example, CdSe QDSCs showed a decrease of 25% in PCE after only 200 s of irradiation, while an additional ZnS/ ZnSe shelling could improve their stability to nearly no loss in PCE over a span of minutes.…”
Section: Device Degradation and Stability Enhancementmentioning
confidence: 99%
“…For example, CdSe QDSCs showed a decrease of 25% in PCE after only 200 s of irradiation, while an additional ZnS/ ZnSe shelling could improve their stability to nearly no loss in PCE over a span of minutes. [201] Several examples of hybrid QD solar cells, based on combinations of two II-VI semiconductor materials (e.g., CdSe/CdTe, CdS/CdTe, or CdS/CdSe), yielded better stabilities than CdSe QDs alone, reaching several hours under constant illumination and up to 6 months for storage in the dark. [168,171] It was found that Mn 2+ doping of QDs was an effective way to boost both performance and stability [168,196] When Mn 2+ ions are present at the shell of these QDs, they generate in-band states which boost the charge extraction by reducing the recombination rate at the core-shell interface.…”
Section: Device Degradation and Stability Enhancementmentioning
confidence: 99%
“…ZnSe is a good alternative material, with a bandgap of 2.70 eV, which is narrower than that of ZnS. It has been reported that ZnSe is beneficial for several types of QDs, such as CdS, CdSe, and CuInS 2 . Kim and co‐workers showed that the trend in the PCEs of CdS/CdSe‐sensitized solar cells followed the sequence QD/Mn−ZnSe>QD/Mn‐ZnS>QD/ZnSe>QD/ZnS, mainly because of decreased recombination rates and enhanced light absorption (Figure b) …”
Section: Interfacial Engineering For Highly Efficient and Stable Phomentioning
confidence: 99%