Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3

Tordjman, Moshe; Weinfeld, Kamira; Kalish, R.

doi:10.1063/1.4986339

Cited by 55 publications

(34 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[32][33][34][35][36] Along with the extreme semiconducting properties such as ultrawide bandgap of 5.5 eV, high thermal conductivity, and high breakdown field, diamond electronic devices provide the attractive route to develop the next-generation electronic devices able to operate under high-power, high-frequency, and high-temperature conditions. The surface density of the 2DHG on H-terminated diamond is as high as 10 13 cm −2 and can reach 10 14 cm −2 when properly selecting the surface molecular or oxides.…”

Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

tical applications due to the high input impedance, breakdown voltage, and integration ability. Tremendous efforts have been made to achieve low subthreshold swing (SS) MOSFETs on low-dimensional materials to overcome the thermal limit of 60 mV dec −1 in conventional CMOS technology. [8][9][10] On the other hand, growing attention has also been paid to the extreme semiconductors MOSFETs based on 2DHG and 2DEG for the applications in high-power, high-frequency, and high temperature electronics. [11][12][13] However, state-of-the-art conventional MOSFETs based on low-dimensional channels such as 2DHG or 2DEG always exhibit normally on (depletion mode) behavior and show uncertainty in threshold voltage. [8][9][10][11][12][13][14][15][16] Energy-efficient normally off (enhancement mode) FETs with low SS values and tunable threshold voltage are strongly in demand from the viewpoint of energy-saving, safety aspects, gate reliability, and electronic circuit simplicity. [17] Junction FET by using p-n junction or Schottky metal gate can achieve normally off operation. [18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. For example, n-type dopants with shallow energy levels in diamond and stable p-type doping in ZnO are notoriously difficult. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet. These bottlenecks makes inversion-type enhancement-mode MOSFETs difficult, although initial results were reported. [22] While for metal-semiconductor FETs (MES-FETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [30] However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability. The formation of recess structure at the gate can successfully lead to normally off operation for 2DEG at the AlGaN/GaN interface, [31] but not applicable to H-terminated diamond and low-dimensional semiconductors.In this work, we propose and demonstrate the device concept of metal-insulator-metal-semiconductor FET (MIMS-FET) based on a 2DHG channel to overcome the drawbacks of MOSFET and MESFET. We show that the MIMS-FET exhibits normally off operation, low subthreshold swing ≈76 mV dec −1 , high drain current, high on/off current ratio over 10 9 , and low gate leakage. These electrical properties are thermally stable up 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics. To reduce power consumption, normally off operation and low-switching-loss metal-oxide fieldeffect transistors (MOSFETs) based on 2DEG or 2DHG are highly in demand. The present methods to achieve normally off MOSFETs have various shortcomings such as reduction in carrier mobility, sacrifice of dra...

show abstract

Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…64 Lastly, recent work showed that WO 3 is able to tune the surface charge transfer of diamond. 67 In fact, the transfer doping efficiency with WO 3 was the highest per minimal surface acceptor coverage reported to date, marking a sizable advance in 2D diamond-based electronic devices. This recent work on WO 3 , in combination with that of the past, attests to the wide variety of applications this material continues to have.…”

Section: Inorganicsmentioning

confidence: 98%

Perovskite-related ReO3-type structures

Evans

Seshadri

et al. 2020

Nat Rev Mater

View full text Add to dashboard Cite

ReO 3-type structures can be described as ABX 3 perovskites in which the A-cation site is unoccupied. They therefore have the general composition BX 3 , where B is normally a cation and X is a bridging anion. The chemical diversity of such structures is very broad, ranging from simple oxides and fluorides, such as WO 3 and AlF 3 , to more complex systems in which the bridging anion is polyatomic, as in the Prussian blue-related cyanides such as Fe(CN) 3 and CoPt(CN) 6. The same topology is also found in metal-organic frameworks, for example In(Im) 3 (Im = imidazolate), and even the well-known MOF-5 structure, where the B-site cation is itself polyatomic. This remarkable chemical diversity gives rise to a wide range of interesting and often unusual properties, including negative thermal expansion (ScF 3), photocatalysis (CoSn(OH) 6), thermoelectricity (CoAs 3), and even a report of superconductivity in a phase that is controversially described as SH 3 with a doubly interpenetrating ReO 3 structure. We present a comprehensive account of this exciting family of materials and discuss current challenges and future opportunities in the area.

show abstract

“…], Nb2O5 [9] and ReO3 [10]. Though encouraging progress has recently been reported for FET devices that incorporate some of these EAO materials [11][12][13], the challenges associated with their integration into a diamond FET architecture and associated process flow have thus far limited their full potential to enhance both device performance and stability of operation.…”

Section: Introductionmentioning

confidence: 99%

Performance Enhancement of Al₂O₃/H-Diamond MOSFETs Utilizing Vacuum Annealing and V₂O₅ as a Surface Electron Acceptor

Macdonald

Crawford

Tallaire

et al. 2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

We report on the performance enhancement of 250 nm gate-length H-diamond FETs through thermal treatment of devices at 400°C and the incorporation of V2O5 as a surface electron acceptor layer. Encapsulation of the H-diamond surface with V2O5 is found to increase the transfer doping efficiency and reduce device access resistance. A reduction in ohmic contact resistance and channel resistance beneath the gate after thermal treatment at 400°C was found to further reduce device onresistance and increase the maximum drain current and peak transconductance. These devices demonstrate the highest drain current (375 mA/mm) and transconductance (98 mS/mm) yet reported for H-diamond FETs of this gate length that incorporate an electron acceptor oxide layer.

show abstract

Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3

Cited by 55 publications

References 41 publications

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Perovskite-related ReO3-type structures

Performance Enhancement of Al₂O₃/H-Diamond MOSFETs Utilizing Vacuum Annealing and V₂O₅ as a Surface Electron Acceptor

Contact Info

Product

Resources

About

Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3

Cited by 55 publications

References 41 publications

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Perovskite-related ReO3-type structures

Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5 as a Surface Electron Acceptor

Contact Info

Product

Resources

About

Performance Enhancement of Al₂O₃/H-Diamond MOSFETs Utilizing Vacuum Annealing and V₂O₅ as a Surface Electron Acceptor