2022
DOI: 10.1016/j.apcatb.2021.121007
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Boosting photocatalytic hydrogen evolution: Orbital redistribution of ultrathin ZnIn2S4 nanosheets via atomic defects

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Cited by 78 publications
(37 citation statements)
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“…[ 17 ] In terms of the ZnIn 2 S 4 , the asymmetrical layered structure of [S–In]–[S–In–S]–[Zn–S] unit cell can also offer the opportunity for maneuvering charge kinetics. [ 18 ] However, no efforts have been focused on the polarization‐induced B‐IEF effect in the crystal structure of ZnIn 2 S 4 . Given this situation, it is expected that the engineering of the ZnIn 2 S 4 material by strengthening the polarity intensity in microscopic units can provide a strong driving force to promote the bulk charge separation.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 17 ] In terms of the ZnIn 2 S 4 , the asymmetrical layered structure of [S–In]–[S–In–S]–[Zn–S] unit cell can also offer the opportunity for maneuvering charge kinetics. [ 18 ] However, no efforts have been focused on the polarization‐induced B‐IEF effect in the crystal structure of ZnIn 2 S 4 . Given this situation, it is expected that the engineering of the ZnIn 2 S 4 material by strengthening the polarity intensity in microscopic units can provide a strong driving force to promote the bulk charge separation.…”
Section: Introductionmentioning
confidence: 99%
“…[17] In terms of the ZnIn 2 S 4 , the asymmetrical layered structure of [S-In]-[S-In-S]-[Zn-S] unit cell can also offer the opportunity for maneuvering charge kinetics. [18] However, no efforts have been focused on the polarization-induced…”
Section: Introductionmentioning
confidence: 99%
“…For pristine ZIS, the binding energies located at 1044.85 and 1021.75 eV correspond to Zn 2p 1/2 and Zn 2p 3/2 , respectively. 40,41 After coupling with MoC@NG, the binding energies of Zn 2p in MoC@NG-15@ZIS increase to 1044.96 and 1021.84 eV. According to Fig.…”
Section: Resultsmentioning
confidence: 86%
“…Zn or S defects promote the directional migration of photogenerated electrons but have little effect on hole regulation. Luan et al, (2022 ) successfully prepared ultra-thin ZnIn 2 S 4 nanosheets with an abundant [InS] 6 intermediate layer and perfect [InS] 4 and [ZnS] 4 surface layer by controlling the crystal growth of ZnIn 2 S 4 with the rapid heating and hydrothermal method. The in vacancy induces the redistribution of orbitals near the maximum value of the valence band, separates the oxidation and reduction sites on both sides of the ultra-thin ZnIn 2 S 4 nanosheet with in vacancy, and increases the density of states between the valence band and the conduction band.…”
Section: Optimization Of Photocatalytic Hydrogen Evolution Performanc...mentioning
confidence: 99%