Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

Guedon, Florent; Singh, Santosh Kumar; McMahon, R.A.; Udrea, F.

doi:10.1109/tpel.2012.2201753

Cited by 29 publications

(11 citation statements)

References 17 publications

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“…Although SiC power device technology is still relatively immature, the theoretical benefits of SiC are continually being demonstrated in laboratory hardware. For example, SiC JFETs were found to be electrically and thermally superior to Si CoolMOS devices for comparably designed boost converters for HEV [8]. The high switching frequency capability of SiC devices was demonstrated in [9] and the high operating temperature capability was showcased in [10].…”

Section: Introductionmentioning

confidence: 99%

A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

Whitaker

Barkley

Cole

et al. 2014

IEEE Trans. Power Electron.

371

132

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This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high efficiency for application in electric vehicles (EVs) and plug-in hybrid EVs (PHEVs). The proposed level 2 charger has a two-stage architecture where the first stage is a bridgeless boost ac-dc converter and the second stage is a phaseshifted full-bridge isolated dc-dc converter. The operation of both topologies is presented and the specific advantages gained through the use of SiC power devices are discussed. The design of power stage components, the packaging of the multichip power module, and the system-level packaging is presented with a primary focus on system density and a secondary focus on system efficiency. In this work, a hardware prototype is developed and a peak system efficiency of 95% is measured while operating both power stages with a switching frequency of 200 kHz. A maximum output power of 6.1 kW results in a volumetric power density of 5.0 kW/L and a gravimetric power density of 3.8 kW/kg when considering the volume and mass of the system including a case.Index Terms-AC-DC power converters, battery charger, dc-dc power converters, electric vehicles (EVs), power electronics, silicon carbide (SiC).

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Section: Introductionmentioning

confidence: 99%

A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

Whitaker

Barkley

Cole

et al. 2014

IEEE Trans. Power Electron.

371

132

View full text Add to dashboard Cite

show abstract

“…Due to the higher electric field breakdown strength of SiC material, not only the on-resistance can be reduced compared to a Si MOSFET of an equivalent rating [8], but also the switching energies (in particular compared to IGBTs [9]). The benefits of SiC switching devices compared to Si based alternatives for various applications have been reported in previous work [10]- [15].…”

Section: Introductionmentioning

confidence: 99%

Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

Anthon

Zhang

Andersen

2015

2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…Silicon-carbide (SiC) transistors are gaining popularity for their enormous potential [1][2][3][4]. Recent demonstrations show that SiC transistors can attain outstanding properties such as higher electron density, lower drain-to-source onresistance, lower thermal resistance, and higher breakdown voltage in comparison to silicon (Si) counterparts [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

A Novel Circuit for Characteristics Measurement of SiC Transistors

Cao¹,

Kim²

2014

Journal of Electrical Engineering and Technology

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-This paper proposes a novel test circuit for SiC transistors. On-state resistance under practical application conditions is an important characteristic for the device reliability and conduction efficiency of SiC transistors. In order to measure the on-state resistance in practical applications, high voltage is needed, and high current is also necessary to ignite performance for the devices. A softswitching circuit based on synchronous buck topology is developed in this paper. To provide highvoltage and high-current stresses for the devices without additional spikes and oscillations, a resonant circuit has been introduced. Using the novel circuit technology, soft-switching can be successfully realized for all the switches. Furthermore, in order to achieve accurate measurement of on-state resistance under switching operations, an active clamp circuit is employed. Operation principle and design analysis of the circuit are discussed. The dynamic measurement method is illustrated in detail. Simulation and experiments were carried out to verify the feasibility of the circuit. A special test circuit has been developed and built. Experimental results confirm that the proposed circuit gives a good insight of the devices performance in real applications.

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Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

Cited by 29 publications

References 17 publications

A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

A Novel Circuit for Characteristics Measurement of SiC Transistors

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