Bonding temperature dependence of GalnAsP/InP wafer grown on directly bonded InP/Si substrate

Aikawa, Masaki; Nishiyama, Tetsuo; Kamada, Yuya Onuki Naoki; Han, Xu; Periyanayagam, Gandhi Kallarasan; Uchida, K.; Sugiyama, Hirokazu; Hayasaka, Natsuki; Shimomura, Koichiro

doi:10.23919/ltb-3d.2017.7947471

Cited by 1 publication

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“…22) We presented the void density of an InP=Si substrate and the photoluminescence (PL), electrical resistance, and current-light output power of the laser used for the growth of a wafer on the InP=Si substrate in the LTB-3D Workshop. 23,24) In this paper, we explain in more detail the surface conditions, X-ray diffraction (XRD) measurements of the wafer after its MOVPE growth and also lasing characteristics, such as current-voltage characteristics, lasing spectra, and temperature dependence on the threshold current of the laser for the GaInAsP double heterostructure growth on a directly bonded InP=Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

Aikawa¹,

Onuki²,

Hayasaka³

et al. 2018

Jpn. J. Appl. Phys.

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The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

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Section: Introductionmentioning

confidence: 99%