Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs

Oh, Seung Kyu; Jang, T.; Jo, Young Je; Ko, Hwa-Young; Kwak, Joon Seop

doi:10.1109/ted.2015.2509964

Cited by 8 publications

(6 citation statements)

References 8 publications

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“…To drive the passive‐matrix µ‐LED arrays, n‐pad line layers and a p‐pad line layer were applied by inter‐metal dielectric (IMD) layer patterning using organic photosensitive polyimide (PSPI) and a standard photolithography process (5‐µm‐thick organic PSPI layer). The optimized Ni (50 nm), Al (100 nm), Ti (25 nm), Al (500 nm), Ti (25 nm), and Al (500 nm) n‐pad line layers were deposited on the PSPI IMD layers after O 2 plasma treatment . The p‐pad line layer was formed using similar steps to those for the n‐pad line layer.…”

Section: Methodsmentioning

confidence: 99%

Improved Light Output Power of 16 × 16 Pixelated Micro‐LEDs for Headlights by Enhancing the Reflectivity and Coverage of the p‐Electrode

Kim

Cho

Lee

et al. 2018

Physica Status Solidi (a)

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A pixel array of micro‐light emitting diodes (µ‐LEDs) based on a flip‐chip structure and driven by a passive matrix is fabricated. The array is fabricated through multi‐level metallization using a photosensitive polyimide (PSPI) inter‐metal dielectric (IMD) layer. The device consisted of 256 pixels in a 2 × 2 mm2 array (the individual pixel area is 115 × 115 µm2). This device facilitates the control of individual µ‐LEDs in the array. To investigate the effect of reflectivity and coverage to p‐GaN on mesa area of p‐type electrode, controlled and uncontrolled µ‐LED arrays is fabricated with different reflectivity and coverage of the p‐type electrode. The results show that the devices has similar electrical properties. The light output power and maximum electroluminescence intensity of the controlled µ‐LED array is improved by 3.7 and 5.1 times at injection currents of 100 and 60 mA compared to the uncontrolled µ‐LED array, respectively. The variation of dark spaces in several emission images (total 9 pixels) is investigated as a function of the pixel pitch for the controlled µ‐LED array at an injection current of 20 mA. The results shows that the dark space between pixels almost disappears at a pixel pitch of 125 µm.

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Section: Methodsmentioning

confidence: 99%

Improved Light Output Power of 16 × 16 Pixelated Micro‐LEDs for Headlights by Enhancing the Reflectivity and Coverage of the p‐Electrode

Kim

Cho

Lee

et al. 2018

Physica Status Solidi (a)

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“…Despite the challenge, Oh et al realized multilevel metallization structures on AlGaN/GaN HEMTs using a photosensitive-polyimide intermetal dielectric (IMD) layer depicted in Fig. 13 [76,77]. The multilevel Vertical temperature distributions across epitaxial layers directly under the gate finger for the reference HEMT with a through-wafer source-contact via hole and the HEMT with both a through-wafer source-contact via hole and an additional through Si-substrate via hole under the active area filled with copper (Reproduced from Ref.…”

Section: Thermal Management Solutions For Power Electronicsmentioning

confidence: 99%

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Lundh

Shervin

et al. 2019

Journal of Electronic Packaging

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GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

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“…In recent years, the static characteristics of BPOA devices, especially the on-state current conduction capability, have been extensively investigated [3,8]. Sönmez et al [10] have demonstrated significantly improved on-state current density of D-mode HEMTs based on area-efficient BPOA.…”

Section: Introductionmentioning

confidence: 99%

“…cascade-type co-package configurations, the depletion-mode sapphire-based HEMT (D-mode HEMT) assembly as the core component encroaches on a larger chip area [4][5][6], resulting in packaging-related costs and limiting chip miniaturization. In order to alleviate the area consumption caused by high-voltage device scaling, bonding pad over active (BPOA) architecture has been demonstrated as an effective solution to optimize structural layout (see figure 1) [3], enabling 50%-74% area reduction [7,8] as compared to conventional horizontal pad layout devices (i.e. the pad electrodes and the multi-finger active area are on the same base plane).…”

Section: Introductionmentioning

confidence: 99%

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

Guo,

Zhou,

et al. 2024

Semicond. Sci. Technol.

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Bonding pad over active (BPOA) layout, which stacks traditional horizontal structure pad electrodes vertically above the active area, is an area-effective device architecture and packaging-enabled solution for GaN-based HEMTs. In this work, the dynamic switching and electric field distribution of such layout, as well as associated capacitance-voltage and trapping characteristics, are comprehensively studied on D-mode GaN-on-sapphire HEMT by performing numerical simulations. In terms of different pad electrodes covering the active area, BPOA is composed of various structures such as gate-related and drain-related BPOAs (i.e. G-BPOA and D-BPOA), among which G-BPOA exhibits inferior switching characteristics due to the additional introduction of Miller capacitance that prolongs the device switching, while breakdown voltage of D-BPOA is 400~900 V lower than other BPOA counterparts due to the interplay between D-BPOA and the drain electrode. Furthermore, the effects of trap capture cross section and trap density on switching characteristics are evaluated. These results highlight the differences in electrical characteristics of various structures within the BPOA layout, and provide valuable insights into BPOA device design and performance improvement.

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Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs

Cited by 8 publications

References 8 publications

Improved Light Output Power of 16 × 16 Pixelated Micro‐LEDs for Headlights by Enhancing the Reflectivity and Coverage of the p‐Electrode

Improved Light Output Power of 16 × 16 Pixelated Micro‐LEDs for Headlights by Enhancing the Reflectivity and Coverage of the p‐Electrode

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

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