BN‐Enabled Epitaxy of Pb_1–xSn_xSe Nanoplates on SiO₂/Si for High‐Performance Mid‐Infrared Detection

Abstract

By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb(1-x)Sn(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm(2) V(-1) s(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 μm).

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“…For example, Pb 1–x Sn x Se is a narrow direct bandgap semiconductor with promising applications in mid‐infrared photodetection (1–3 μm), topological crystalline insulators and high‐speed logic devices due to the doping of Pb 104, 107, 195, 196. He and co‐workers104 reported the synthesis of ultrathin Pb 1–x Sn x Se nanoplates via a simple doping process.…”

“…Furthermore, they directly grown ultrathin Pb 1–x Sn x Se nanoplates on BN of which the surface is free of dangling bonds allowing the direct growth of a highly lattice‐mismatched heterostructures, characterized by the high‐resolution TEM image and AFM profile of the heterostruture (Figure 6c,d). Therefore, the relaxed strain and less surface states at the interface of epilayer and BN can not only improve their electronic properties but also promote their applications in integration techniques 107. In addition, the bandgap of selenium doped SnS 2 can be tuned from 2.1 eV (SnS 2 ) to 1.0 eV (SnSe 2 ) through changing the Se content.…”

“…2015, American Chemical Society. (c,d) Reproduced with permission 107. (e) Reproduced with permission 74.…”

“…In general, GIVMCs have been classified into two groups according to their chemical compositions: MX (SiC,89 SiS,90 GeS,91, 92 GeSe,93, 94, 95, 96 SnS,97, 98, 99 SnSe,100, 101, 102, 103, 104, 105, 106, 107, 108 SnTe,109, 110) and MX 2 (GeS 2 ,111 GeSe 2 ,112, 113, 114, 115 SnS 2 ,72, 116, 117, 118 SnSe 2 73, 119, 120, 121, 122, 123, 124, 125). In this part, some typical GIVMCs are presented in Table 1 .…”

“…Then they speculated that the high‐quality single line structure with low defect density is crucial role in the process, confirmed by the small hysterisis and the pronounced XRD spectrum. Recently, He and co‐workers107 directly grown ultrathin Pb 1–x Sn x Se nanoplates on BN of which the surface is free of dangling bonds allowing the direct growth of a highly lattice‐mismatched heterosturctures (Figure 9j). Therefore, the relaxed strain and less surface states at the interface of epilayer and BN can not only improve their electronic properties but also promote their applications in integration techniques.…”