DOI: 10.1002/9780470294635.ch33
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BN and SiBN Fiber Coatings Via Cvd Using a Single Source, Liquid Precursor Based on Borazine

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Cited by 10 publications
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“…Several methods have been used to minimize oxidation . These include (1) making the proportional limit (matrix cracking) stress as high as possible, (2) use of a multilayer coatings with many thin 10–100 nm alternating layers of C and matrix, (3) doping BN with Si to enhance BN oxidation resistance, and (4) overcoating BN with protective layers . All these approaches have limitations on the extent to which they improve CMC oxidation resistance.…”
Section: Introductionmentioning
confidence: 99%
“…Several methods have been used to minimize oxidation . These include (1) making the proportional limit (matrix cracking) stress as high as possible, (2) use of a multilayer coatings with many thin 10–100 nm alternating layers of C and matrix, (3) doping BN with Si to enhance BN oxidation resistance, and (4) overcoating BN with protective layers . All these approaches have limitations on the extent to which they improve CMC oxidation resistance.…”
Section: Introductionmentioning
confidence: 99%
“…[2] Moreover, owing to its excellent resistance to the inter-diffusion of oxygen, as well as high thermal and chemical stability, [3] IrO 2 films serve as electrodes for high-density dynamic random access memory (DRAM), or nonvolatile ferroelectric random access memory (NVFRAM), devices. [4] Related investigations have indicated that polarization fatigue of PZT ferroelectric capacitors can be effectively suppressed by using IrO 2 thin film electrodes. [5] In recent reports, IrO 2 was also used to fabricate field-emission cathodes for microelectronic devices and field-emission displays.…”
mentioning
confidence: 99%