Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

Wu, Yan; Ji, Lingfei; Zhao, Lin; Jiang, Yijian; Zhai, Tianrui

doi:10.1063/1.4863437

Cited by 15 publications

(9 citation statements)

References 27 publications

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“…In order to assess the contribution from different radiative recombination channels, the PL spectra of porous sample a and d were deconvoluted into Gaussian-like peaks 32 , as shown in Fig. 6 .…”

Section: Resultsmentioning

confidence: 99%

White Light Emission from Fluorescent SiC with Porous Surface

Fiordaliso

et al. 2017

Sci Rep

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AbstarctWe report for the first time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fluorescent SiC) layer containing a hybrid structure. The surface of fluorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20 nm thick Al2O3, the photoluminescence intensity from the porous layer was significant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10 µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from the bulk fluorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460 nm and 530 nm. Such blue-green emission phenomenon can be attributed to neutral oxygen vacancies and interface C-related surface defects generated dring anodic oxidation process. Porous fluorescent SiC can offer a great flexibility in color rendering by changing the thickness of porous layer and bulk fluorescent layer. Such a novel approach opens a new perspective for the development of high performance and rare-earth element free white light emitting materials.

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Section: Resultsmentioning

confidence: 99%

White Light Emission from Fluorescent SiC with Porous Surface

Fiordaliso

et al. 2017

Sci Rep

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“…Technological application of semiconductors depends critically on their capability of doping to produce enough free carriers (electrons and/or holes) at working temperature. Wide-band-gap (WBG) semiconductors, such as ZnO, , SiC, GaN, , and AlN, , are extensively studied because of their promising applications in many short-wavelength optoelectronic devices and high-power electronic devices. Those WBG semiconductors with high conductivity (>1 × 10 4 Ω –1 cm –1 ) and large band gap (>3 eV) have long been considered as intriguing materials functioning as transparent conductive materials (TCMs) in flat panel display, , photovoltaic solar cells, , light-emitting diodes (LED), − etc., because light can pass through them with low absorption.…”

Section: Introductionmentioning

confidence: 99%

Design Principles of p-Type Transparent Conductive Materials

Cao

Deng

Luo

2019

ACS Appl. Mater. Interfaces

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Transparent conductive materials (TCMs) has always been playing a significant role in electronic and photovoltaic area, due to its prominent optical and electronic properties. To render those transparent materials highly conductive, efficient n-and p-type doping is critically needed to obtain high concentration of free electron and hole carriers. Despite extensive research over the past five decades, highquality p-type doping of wide-band-gap transparent materials remains a challenge. Here, we summarize four proposed design principles to enhance the p-type conductivity of these wide band gap materials, including (i) reducing the formation energy of the acceptors to enhance the dopant concentration; (ii) lowering the ionization energy and, hence, increasing the ionization of the acceptors to increase the concentration of the free holes; (iii) increasing the VBM of the host material to approaching the pinned Fermi level; and (iv) suppressing the compensating donors to shifting the pinning Fermi level toward the VBM. For each mechanism, we discuss in detail its underlying physics and provided some examples to illustrate the design principles. From this review, one could learn the doping principles and have a strategic mind when designing other p-type materials.

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“…3(c) ; without the C - Si bonds (282.9 eV), the main carbon bonds were C-C (284.8 eV), CH 2 -O (286.3 eV) and C=O (287.2 eV) 19 , 20 . Our previous work using a nanosecond pulsed excimer laser (~10 7 W/cm 2 , 248 nm, 5.0 eV) demonstrated that the enhancement of blue PL of SiC originated from shallow defects induced by nitrogen implantation 21 . The different behaviour observed here indicates that nitrogen was not involved in this infrared (IR) picosecond laser (1064 nm, 1.2 eV) treatment.…”

Section: Resultsmentioning

confidence: 99%

Selective 6H-SiC White Light Emission by Picosecond Laser Direct Writing

Wang

Lin

et al. 2018

Sci Rep

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Displaying a full or tuneable emission spectrum with highly efficient is significant for luminescent materials used in solid-state lighting. Silicon carbide (SiC) has potential for use in photoelectric devices that operate under extreme conditions. In this paper, we present a method to selectively modify the photoluminescence (PL) properties of SiC by ultrafast laser direct writing. Based on this method, visible white PL could be observed by the naked eye at room temperature under ultraviolet excitation. By increasing the laser power intensity from 40 to 80 MW/cm2, the PL of the irradiated samples increased and pure white sunlight-like emission with controlled colour temperature was realised. The optimised laser power intensity of 65 MW/cm2 achieved a desirable colour temperature similar to that of sunlight (x = 0.33, y = 0.33 and colour temperature of 5500 K) and suppressed blue emission. By direct laser irradiation along designed scanning path, a large-scale and arbitrary pattern white emission was fabricated. The origin of the white luminescence was a mixture of multiple luminescent transitions of oxygen-related centres that turned the Si-C system into silicon oxycarbide. This work sheds light on new luminescent materials and a preparation technique for next-generation lighting devices.

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Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

Cited by 15 publications

References 27 publications

White Light Emission from Fluorescent SiC with Porous Surface

White Light Emission from Fluorescent SiC with Porous Surface

Design Principles of p-Type Transparent Conductive Materials

Selective 6H-SiC White Light Emission by Picosecond Laser Direct Writing

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