Blue Light-Emitting Diodes Grown on ZnO Substrates

Xia, Yao; Brault, J.; Damilano, B.; Chenot, Sébastien; Vennéguès, P.; Némoz, M.; Teisseire, M.; Leroux, M.; Obrecht, Rémy; Robin, I. C.; Santailler, Jean‐Louis; Feuillet, G.; Chauveau, J.-M.

doi:10.7567/apex.6.042101

Cited by 16 publications

(17 citation statements)

References 29 publications

(38 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, it is very challenging to grow high quality GaN thin films on ZnO substrates because of a large difference of more than 80 meV/Å 2 between the surface energy of ZnO and that of GaN along c or -c directions. This is consistent with experimental observations [12,[23][24][25][26][27][28][29][30][31][32][33][34][35]. Also, we found that this conclusion is functional-independent.…”

Section: Fig 4 Calculated Interface Configurations Forsupporting

confidence: 93%

“…Many experimental attempts have been taken to grow high crystal quality GaN on ZnO substrates [12,[23][24][25][26][27][28][29]. However, experimentally, it is difficult to form layer by layer type coherent growth, especially for molecular beam epitaxy and organometallic vapor phase epitaxy techniques at high temperature.…”

Section: Introductionmentioning

confidence: 99%

“…However, experimentally, it is difficult to form layer by layer type coherent growth, especially for molecular beam epitaxy and organometallic vapor phase epitaxy techniques at high temperature. Instead, 3D-like growth have been observed [12,28], with some interface layers of secondary phases like Ga2O3, Ga2ZnO4 and Zn3N2 [12,[30][31][32]. Moreover, it has been shown that even if the secondary phase layers are avoided, the growth was still 3D-like [12].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Zhang

Tse

et al. 2018

Phys. Rev. Materials

View full text Add to dashboard Cite

Heterostructures of wurtzite based devices have attracted great research interests since the tremendous success of GaN in light emitting diodes (LED) industry. Among the possible heterostructure material candidates, high quality GaN thin films on inexpensive and lattice matched ZnO substrate are both commercially and technologically desirable. However, the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces. Therefore, the intrinsic wetting condition forbids such heterostructures.As a result, poor crystal quality and 3D growth mode were obtained. To dramatically change the growth mode of the heterostructure, we propose to use hydrogen as a surfactant, confirmed by our first principles calculations. Stable H involved surface configurations and interfaces are investigated, with the help of newly developed algorithms. By applying the experimental Gibbs free energy of H2, we also predict the temperature and chemical potential of H, which is critical in experimental realizations of our strategy. This novel approach will for the first time make the growth of high quality GaN thin films on ZnO substrates possible. We believe that our new strategy may reduce the manufactory cost and improve the crystal quality and the efficiency of GaN based devices.

show abstract

Section: Fig 4 Calculated Interface Configurations Forsupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Zhang

Tse

et al. 2018

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…Therefore, it's very challenging to grow high quality GaN thin films on ZnO substrates, however, high quality ZnO thin film on GaN substrate is possible [53][54][55][56][57][58][59][60][61][62][63][64][65]. Indeed, 3D-like growth of GaN on ZnO substrate has already been observed [58,60].…”

Section: Resultsmentioning

confidence: 99%

New approaches for calculating absolute surface energies of wurtzite (0001)/(0001¯): A study of ZnO and GaN

Zhang

Tse

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

The accurate absolute surface energies of (0001)/(0001 ̅ ) surfaces of wurtzite structures are crucial in determining the thin film growth mode of important energy materials. However, the surface energies still remain to be solved due to the intrinsic difficulty of calculating dangling bond energy of asymmetrically bonded surface atoms. In this study, we used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN. The calculations were based on the pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules, using density functional theory approaches. And the surface energies of (0001)/(0001 ̅ ) surfaces of wurtzite ZnO and GaN we obtained showed relatively high self-consistencies. A wedge structure calculation with a new bottom surface passivation scheme of group I and group VII elements was also proposed and performed to show converged absolute surface energy of wurtzite ZnO polar surfaces, and the result were also compared with the above method. These calculations and comparisons may provide important insights to crystal growths of the above materials, thereby leading to significant performance enhancements of semiconductor devices.

show abstract

“…ZnO is efficiently used as a fluorescent [3], photo-voltaic [4], gas sensing [5], MEMS [6] and bio-labeling [7] applications. Flexible polymeric materials which emit blue light are interested in future optics based technology [8][9][10][11][12]. Incorporation of nanomaterials in polymers makes a new class of materials which have versatile properties and show potential ability in various fields like flexible light emitters [13,14], magnetic storage [15], energy storage [16] and optical power limiters [17].…”

Section: Introductionmentioning

confidence: 99%