“…1c) is significantly different from the as-ablated Si NPs (Fig. 17,23,37,38 The PL of the separated Si NPs, centred at 335 nm (3.64 eV), is consistent with that of chemically synthesized alkyl-capped Si NPs, 8,31,33 where emission in the ~330-360 nm region was attributed to be a result of electron-hole recombination across the direct Γ 4 eV). 17,23,37,38 The PL of the separated Si NPs, centred at 335 nm (3.64 eV), is consistent with that of chemically synthesized alkyl-capped Si NPs, 8,31,33 where emission in the ~330-360 nm region was attributed to be a result of electron-hole recombination across the direct Γ 4 eV).…”