Blue-Green Light Emission From Si and SiC Quantum Dots Co-Doped Si-Rich SiC $p\hbox{-}i\hbox{-}n$ Junction Diode

Tai, Hung-Yu; Cheng, Chih-Hsien; Lin, Gong‐Ru

doi:10.1109/jstqe.2013.2291701

Cited by 23 publications

(7 citation statements)

References 32 publications

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“…From this point of view, the nonstoichiometric silicon carbide (SiC) is recently considered as one of the potential candidates. The nonstoichiometric SiC has been extensively investigated for different applications such as light-emitting diodes (LEDs), − solar cells, − and detectors. − Benefiting from the relatively wide bandgap energy ( E g , for the commonly encountered polymorph of a-SiC E g = 3.05 eV) and high thermal stability, the nonstoichiometric SiC offers a low absorption coefficient and a high optical damage threshold, which is suitable for high-power operation. Moreover, the nonstoichiometric SiC is predicted to exhibit high nonlinear refractive index at optical telecommunication wavelengths; however, there is lack of literature discussing the transient variation on the nonlinear refractive index of nonstoichiometric SiC at near-infrared wavelengths …”

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confidence: 99%

Nonstoichiometric SiC Bus/Ring Waveguide Based All-Optical Data Format Follower and Inverter

Cheng

et al. 2016

ACS Photonics

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Nonstoichiometric silicon carbide (SiC) bus/ring waveguide resonator based all-optical data-format follower and inverter is demonstrated to perform ultrafast dual-functional wavelength and data-format conversion. The buried Si quantum dots (Si-QDs) with strong quantum confinement effect effectively result in a significant change on the nonlinear refractive index of 3.14 × 10–13 cm2/W, which induces a red-shift of 0.07 nm on the resonant wavelength comb of the nonstoichiometric SiC ring waveguide resonator. By injecting the 12 Gbit/s optical pulsed return-to-zero on–off keying (PRZ-OOK) data stream into the ring waveguide at a notched wavelength of 1551.08 nm, the induced red-shift on resonant wavelengths allows versatile all-optical data processing functions, including data wavelength conversion and data format following/inversion, on the data patterns transferred to the probe. The eye-opening diagram analysis at 12 Gbit/s reveals that the data transferred to the probe can provide a signal-to-noise ratio of 9.4 dB, and a receiving power penalty is degraded by 2.6 dB as compared to that of the pump data.

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confidence: 99%

Nonstoichiometric SiC Bus/Ring Waveguide Based All-Optical Data Format Follower and Inverter

Cheng

et al. 2016

ACS Photonics

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“…20 In contrast, the quantum yield of SiC QDs is much higher (17% 21 ) relative to that of bulk SiC due to the spatial confinement effect, and they show application potential in biological labeling 21,22 and solid-state lighting. 23,24 However, the luminescence behaviors of SiC QDs are complex and the underlying mechanisms remain unclear. 16 Herein, we report the direct experimental evidence of the hexagonal to cubic phase transformation in the SiC QDs at ambient temperature and pressure from microstructural and optical characterizations.…”

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Experimental evidence of α → β phase transformation in SiC quantum dots and their size-dependent luminescence

Guo

Dai

Fan

et al. 2014

Applied Physics Letters

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“…In 2012, Huang et al also fabricated the Si-QDs with an average size of 2.4 nm and an area density of 4.6 × 10 12 cm −2 in Si-rich SiN x film to demonstrate the 710-nm Si-QD LED [ 152 ]. Owing to the dielectric host matrix with the relatively large resistivity to decrease the current injection efficiency, the SiC semiconductor was selected as a candidate of host matrices [ 153 , 154 , 155 , 156 , 157 ]. In 2011, Rui et al detuned the Si-QD from 4.2 to 1.4 nm in SiC host matrix by detuning the C/Si composition ratio and annealing temperature to blue-shift the EL peak of the Si-QD LED from 775 to 539 nm.…”

Section: Pecvd Grown Si-qd Ledmentioning

confidence: 99%

“…This method respectively decreased the turn-on voltage and current of yellow-light Si-QD LED to 4.2 V and 0.42 mA to enhance the maximal output power density to 8.52 μW/cm 2 with a corresponding P–I curve of 0.75 μW/A [ 156 ]. Tai and co-workers further suppressed the thickness of SiC with buried Si-QDs to 50 nm to enhance the EQE to 0.158% [ 157 ]. In our work, Figure 10 exhibits the EL peaks at 480, 700, and 850 nm for Si-QD LED owing to the contribution of the different-size Si-QD.…”

Section: Pecvd Grown Si-qd Ledmentioning

confidence: 99%

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Cheng

Lin

2020

Materials

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This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.

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Blue-Green Light Emission From Si and SiC Quantum Dots Co-Doped Si-Rich SiC $p\hbox{-}i\hbox{-}n$ Junction Diode

Cited by 23 publications

References 32 publications

Nonstoichiometric SiC Bus/Ring Waveguide Based All-Optical Data Format Follower and Inverter

Nonstoichiometric SiC Bus/Ring Waveguide Based All-Optical Data Format Follower and Inverter

Experimental evidence of α → β phase transformation in SiC quantum dots and their size-dependent luminescence

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

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