Blue-emitting β-SiC fabricated by annealing C60 coupled on porous silicon

Abstract

C 60 molecules were chemically coupled in the pores of porous Si through a coupling agent and then coated with a layer of Si, and followed by N 2 annealing. X-ray diffraction results indicate that the fabricated samples contain ␤-SiC particles which may exist in the pores, in addition to Si, SiO 2 , and graphite. The photoluminescence ͑PL͒ spectra show an asymmetrical broadband, which can be Gaussian divided into two bands at 380 ͑3.26 eV͒ and 454 ͑2.73 eV͒ nm. Spectral analyses and the experimental results from infrared spectroscopy and PL excitation measurements suggest that the 380 nm PL band is related to oxygen-vacancy defects in the SiO 2 matrix, whereas the blue PL band is closely connected with the ␤-SiC particles. Our experiments provide a way for fabricating stable blue-emitting ␤-SiC materials.

Luminescence from porous layers produced by Ag‐assisted electroless etching

“…Recently, Si-implanted SiO 2 films thermally grown on Si substrates were reported to have room temperature blue emission related to oxygen vacancies. The blue emission is stable at room temperature and in N 2 at about 600 °C [3,4]. It has been reported that annealing of oxidized porous silicon in water at about 250 °C drastically enhances its blue luminescence [5].…”

Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

“…In addition, silicon-carbon bonds can be also used to passivate the surface of Por-Si, because the bonds protect from the oxidation of the Por-Si surface. Several groups have investigated the formation of silicon-carbon bonds on Por-Si by means of different techniques including the two-step wet chemical technique [14,15], magnetron controlled sputtering [16], capacitive RF discharge plasma deposition [17], ionized cluster beam deposition [18], chemical vapor deposition [19], hot filament chemical vapor deposition [20] and thermally carbonized process [21,22]. The carbonized Por-Si has been observed to be stable in various chemical environments.…”

AFM observation of nanosized SiC dots prepared by ion beam deposition

“…1,2 Recently, SiC also has received much attention as a blue-emitting material owing to its wide bandgap. 3,4 However, the quantum efficiencies of SiC light-emitting diodes (LEDs) reported so far are still as low as ¾10 4 , attributed to its intrinsic indirect bandgap character. 5 Thus, it is important to overcome this disadvantage in order to fabricate hightemperature and environment-resistive optoelectronic SiC devices with commercial availability.…”