Blistering Induced Degradation of Thermal Stability Al₂O₃Passivation Layer in Crystal Si Solar Cells

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

“…However, literature in low thermal budget annealing process using RTP with less annealing time is very few. 9,26 In this paper, a systematic study is made wherein Al 2 O3 films are deposited using thermal ALD process at different deposition temperature. The influence of T dep on silicon surface passivation properties is investigated.…”

Synthesis of alumina supported Pd–Cu alloy nanoparticles for CO oxidation via a fast and facile method

“…2c presents the O1s spectra. For all samples, O1s spectra can be deconvoluted into three peaks at 530.4, 531.5 and 532.6 eV, ascribed to chemisorbed oxygen species, 20 Al-O 21 and OH, 22 respectively. The ratios of chemisorbed oxygen species in O1s for the samples were also summarized in Table 1.…”

AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin film

“…Increased blistering has been found to correlate with degraded surface passivation and decreased open-circuit voltage (V oc ) in silicon solar cells. [101,102,103,104] In a complex segmented device, such as a pixel detector, ruptured blisters pose a severe risk of short-circuits between elements in the detector, which may render the device non-functional. An example of blistering between segments can be seen in Fig.…”