Black Phosphorus: Resonantly Increased Optical Frequency Conversion in Atomically Thin Black Phosphorus (Adv. Mater. 48/2016)

Rodrigues, Manuel J. L. F.; Matos, Christiano J. S. de; Ho, Yi Wei; Peixoto, Hugo; Oliveira, Rafael E. P. de; Wu, Hsin‐Yu; Neto, A. H. Castro; Viana-Gomes, José

doi:10.1002/adma.201670339

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“…Exfoliation down to the 2‐D limit has renewed the interest in BP . Its electronic, optical, optoelectronic and vibrational properties have been actively studied once again in the light of the quantum confinement effects provided by the lower dimensionality . In addition, the semiconductor nature of BP has allowed for the demonstration of highly promising devices for electronics (e.g.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy in black phosphorus

Ribeiro

Pimenta

Matos

2017

J Raman Spectroscopy

124

110

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In this article, we review the current status of Raman spectroscopy in orthorhombic black phosphorus (BP) (for simplicity, henceforth, referred to as BP). BP is a layered semiconductor crystal that recently regained interest because it can be exfoliated down to the single layer, thus exhibiting 2-D properties. First, we briefly review the crystalline structure and the phonon dispersion relations in BP. Then, the symmetries of the Raman-active modes are discussed in the light of group theory, and the scattering configurations for observing the different phonon modes are presented. Polarized Raman spectroscopy results are discussed and reveal unusual angular dependence features, which can be ascribed to the linear dichroism and to the complex nature of the electron-phonon matrix elements. Edge phonon effects originated from rearrangements of the atomic terminations are also discussed. Subsequently, Raman modes that emerge from interlayer interaction and that are only visible in the few-layer regime are presented and discussed. Finally, we outline new perspectives to BP Raman spectroscopy in directions that remain partially or totally unexplored and that can provide potentially important outcomes to problems such as defects, oxidation, doping, strain, stacking order and other BP-like 2-D materials.

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Section: Introductionmentioning

confidence: 99%