Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Abstract

Two-dimensional (2D) black phosphorus (BP) is considered an ideal building block for field-effect transistors (FETs) owing to its unique structure and intriguing properties. To achieve high-performance BP-FETs, it is essential to establish a reliable and low-resistance contact between the BP and the electrodes. In this study, we employed a localized Joule heating method to improve the contact between the 2D BP and gold electrodes, resulting in enhanced BP-FET performance. Upon applying a sufficiently large source–drain voltage, the zero-bias conductance of the device increased by approximately five orders of magnitude, and the linearity of the current–voltage curves was also enhanced. This contact improvement can be attributed to the formation of gold phosphide at the interface of the BP and the gold electrodes owing to current-generated localized Joule heat. The fabricated BP-FET demonstrated a high on/off ratio of 4850 and an on-state conductance per unit channel width of 1.25 μS μm−1, significantly surpassing those of the BP-FETs without electrical annealing. These findings offer a method to achieve a low-resistance BP/metal contact for developing high-performance BP-based electronic devices.

Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor

“…The modified VDS is then employed as the boundary condition for the intrinsic part of the device. Notably, reported contact resistance values in literature span from approximately 100 Ω-µm to a few kΩ-µm [47][48][49][50]. Additionally, a theoretical upper limit of 14 Ω-µm has been predicted [51].…”