Abstract:High-power impulse magnetron sputtering of a Ta target in precisely controlled Ar+O2+N2 gas mixtures was used to prepare amorphous N-rich tantalum oxynitride (Ta–O–N) films with a finely varied elemental composition. Postdeposition annealing of the films at 900°C for 5 min in vacuum led to their crystallization without any significant change in the elemental composition. The authors show that this approach allows preparation of a Ta–O–N film with a dominant Ta2N2O phase of the bixbyite structure. As far as the… Show more
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