2015
DOI: 10.1007/s11426-015-5348-3
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BiVO4 semiconductor sensitized solar cells

Abstract: Semiconductor sensitized solar cells (SSSCs) are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized bismuth vanadate (BiVO 4 ) quantum dots by employing facile successive ionic layer adsorption and reaction (SILAR) deposition technique, which we then used as a sensitizer for solar energy conversion. The prelimina… Show more

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Cited by 20 publications
(10 citation statements)
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References 28 publications
(35 reference statements)
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“…The 4d spectrum of Bi 0.5 Yb 0.5 VO 4 shown in Figure 10 has the same structure as that reported previously for Yb 2 O 3 65,77,79−81 and is much more complicated than the simple spin−orbit doublet anticipated when the valence configuration is 4f 14 (as in Lu 2 O 3 75 ) due to the final state orbital and exchange coupling with the open 4f shell. Thus, core XPS confirms the conclusion from the 4f spectra that Bi 0.5 Yb 0.5 VO 4 contains 4f 13 Yb(III) and not 4f 14 Yb(II). Similarly, the 4d spectrum of Bi 0.5 Eu 0.5 VO 4 is in agreement with that published previously for Eu 2 O 3 , 81 thus establishing the presence of 4f 6 Eu(III) and not 4f 7 Eu(III).…”
Section: Fsupporting
confidence: 80%
See 1 more Smart Citation
“…The 4d spectrum of Bi 0.5 Yb 0.5 VO 4 shown in Figure 10 has the same structure as that reported previously for Yb 2 O 3 65,77,79−81 and is much more complicated than the simple spin−orbit doublet anticipated when the valence configuration is 4f 14 (as in Lu 2 O 3 75 ) due to the final state orbital and exchange coupling with the open 4f shell. Thus, core XPS confirms the conclusion from the 4f spectra that Bi 0.5 Yb 0.5 VO 4 contains 4f 13 Yb(III) and not 4f 14 Yb(II). Similarly, the 4d spectrum of Bi 0.5 Eu 0.5 VO 4 is in agreement with that published previously for Eu 2 O 3 , 81 thus establishing the presence of 4f 6 Eu(III) and not 4f 7 Eu(III).…”
Section: Fsupporting
confidence: 80%
“…After the discovery that monoclinic BiVO 4 is an efficient photocatalyst for oxygen evolution in 1999, there has been an ongoing interest in improving the performance of this particular material, as detailed in two recent review articles. , Well, over 1200 papers published in the past 20 years have BiVO 4 in the title, most concerned with photocatalysis. Recent developments include improvement of the oxygen quantum yield by optimizing the morphology of BiVO 4 nanoparticles to include a large fraction of high index surfaces; the use of BiVO 4 as an anode or sensitizer in a photoelectrochemical cell; photovoltaic devices including BiVO 4 as an active layer; , and tandem photoelectrochemical devices including a BiVO 4 photoanode and a photovoltaic cell to enhance water splitting. The solar cells that have been in use in this way include conventional Si solar cells, III–V cells based on GaAs/Ga 1– x In x As 1– x P x , and recently developed perovskite solar cells …”
Section: Introductionmentioning
confidence: 99%
“…So far, BiVO 4 thin lms have been deposited by chemical as well as physical techniques such as spin-coating, 11 dipcoating, 12 electrostatic spray/ultrasonic spray pyrolysis, [13][14][15] reactive magnetron co-sputtering 16 and facile successive ionic layer adsorption and reaction (SILAR). 17 On the other hand, the physical technique of ultrasonic spraying is the most popular and promising technique because of its simplicity, large area production capability and absence of a non-vacuum process.…”
Section: Introductionmentioning
confidence: 99%
“…Due to its good charge carrier properties and to the good band alignment with the bands of BiVO 4 , the electrons from the BiVO 4 conduction band can be injected to WO 3 , enhancing the charge separation and thus the efficiency [1,2,4] . In this study we built WO 3 /BiVO 4 heterojunctions, on porous titanium substrates by combining electrochemical anodization of sputtered tungsten layers and BiVO 4 formation via SILAR (Successive Ionic Layer Adsorption and Reaction) [8] method, and successfully used them to perform gas phase water-splitting. The aforementioned preparation techniques suit particularly well with the specific morphology of the electrode substrate both in terms of reproducibility and achieved performances, while most of the common methods (i.e.…”
Section: Introductionmentioning
confidence: 99%