BiVO4 Photoanode with NiV2O6 Back Contact Interfacial Layer for Improved Hole-Diffusion Length and Photoelectrochemical Water Oxidation Activity
Tahir Naveed Jahangir,
Safwat Abdel-Azeim,
Tarek A. Kandiel
Abstract:The short hole diffusion length (HDL) and high interfacial
recombination
are among the main drawbacks of semiconductor-based solar energy systems.
Surface passivation and introducing an interfacial layer are recognized
for enhancing HDL and charge carrier separation. Herein, we introduced
a facile recipe to design a pinholes-free BiVO4 photoanode
with a NiV2O6 back contact interfacial (BCI)
layer, marking a significant advancement in the HDL and photoelectrochemical
activity. The fabricated BiVO4 photoanode wi… Show more
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