BiVO₄ Photoanode with NiV₂O₆ Back Contact Interfacial Layer for Improved Hole-Diffusion Length and Photoelectrochemical Water Oxidation Activity

Abstract

The short hole diffusion length (HDL) and high interfacial recombination are among the main drawbacks of semiconductor-based solar energy systems. Surface passivation and introducing an interfacial layer are recognized for enhancing HDL and charge carrier separation. Herein, we introduced a facile recipe to design a pinholes-free BiVO4 photoanode with a NiV2O6 back contact interfacial (BCI) layer, marking a significant advancement in the HDL and photoelectrochemical activity. The fabricated BiVO4 photoanode with NiV2O6 BCI layer exhibits a 2-fold increase in the HDL compared to pristine BiVO4. Despite this improvement, we found that the front surface recombination still hinders the water oxidation process, as revealed by photoelectrochemical (PEC) studies employing Na2SO3 electron donors and by intensity-modulated photocurrent spectroscopy measurements. To address this limitation, the surface of the NiV2O6/BiVO4 photoanode was passivated with a cobalt phosphate electrocatalyst, resulting in a dramatic enhancement in the PEC performance. The optimized photoanode achieved a stable photocurrent density of 4.8 mA cm–2 at 1.23 VRHE, which is 12-fold higher than that of the pristine BiVO4 photoanode. Density Functional Theory (DFT) simulations revealed an abrupt electrostatic potential transition at the NiV2O6/BiVO4 interface with BiVO4 being more negative than NiV2O6. A strong built-in electric field is thus generated at the interface and drifts photogenerated electrons toward the NiV2O6 BCI layer and photogenerated holes toward the BiVO4 top layer. As a result, the back-surface recombination is minimized, and ultimately, the HDL is extended in agreement with the experimental findings.