Bitline separated gated multi-bit (BS-GMB) SONOS for high density flash memory

Abstract

A novel bitline separated gated multi-bit (BS-GMB) SONOS memory for high density flash memory is newly introduced. Bitline separation method can decrease the number of gate contacts, and simplify the gate contact interconnection.2N memory nodes with single crystalline silicon channel can be realized in 8F2 size with this structure.