1999
DOI: 10.1016/s0964-1807(99)00034-4
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Bit error rate experiments in ring-shaped RSFQ circuits

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Cited by 9 publications
(6 citation statements)
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“…The latter corresponds to a BER <10 −16 of the chosen operational point, but a further investigation of the BER versus bias current needs to be done to clarify the margins of the operational window. Such a BER estimation is reported also in [12] about a conventional TFF included into a ring-shaped oscillator and realized with the same fabrication technology used here. Therefore, we conclude that the application of passive phase shifters in high-speed RSFQ digital circuits does not deteriorate the BER of the latter.…”
Section: Bit Error Rate Testing Of a Toggle Flip-flop With Passive Ph...supporting
confidence: 53%
See 1 more Smart Citation
“…The latter corresponds to a BER <10 −16 of the chosen operational point, but a further investigation of the BER versus bias current needs to be done to clarify the margins of the operational window. Such a BER estimation is reported also in [12] about a conventional TFF included into a ring-shaped oscillator and realized with the same fabrication technology used here. Therefore, we conclude that the application of passive phase shifters in high-speed RSFQ digital circuits does not deteriorate the BER of the latter.…”
Section: Bit Error Rate Testing Of a Toggle Flip-flop With Passive Ph...supporting
confidence: 53%
“…In contrast to all other circuits in this work, this particular one has been fabricated with our conventional 1 kA cm −2 Nb/Al-Al x O y /Nb trilayer process. Its main part is an RSFQ ring-shaped oscillator [12] containing a TFF with a passive phase shifter. If a single SFQ pulse is generated by the DC/SFQ converter (see figure 8), it enters the ring-shaped oscillator and starts to circulate in it.…”
Section: Bit Error Rate Testing Of a Toggle Flip-flop With Passive Ph...mentioning
confidence: 99%
“…Fabrication of the integrated circuits began with the preparation of the conventional SFQ part of the circuit, applying the technological process based on the PTB production line developed for the fabrication of externally shunted Josephson junctions (JJs) in 4 μm Nb/Al-Al x O y /Nb trilayer technology [18]. Thermally oxidized three-inch silicon wafers were used as substrates.…”
Section: Circuits Fabricationmentioning
confidence: 99%
“…, J 10 , together with the connecting inductances). In principle, the SFQ pulses can also be received from a circular shift register which enables a wide range for the adjustment of pulse duration and frequency, due to appropriate binary code circulation [3,17].…”
Section: Circuit Design and Fabrication Technologymentioning
confidence: 99%