Bistable resistive states of amorphous SrRuO3 thin films

Son, Jong Yeog; Shin, Young-Han; Park, C. S.

doi:10.1063/1.2897306

Cited by 21 publications

(16 citation statements)

References 19 publications

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“…[3][4][5][6] The common RS was prepared as sandwich structure, the RS material in the middle and the metal electrode at both ends. By applying bias voltages in excess of given threshold values, the resistivity can be changed from a low-resistivity state (LRS) to a high-resistivity state (HRS) and back.…”

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confidence: 99%

Bipolar resistive switching behaviors of ITO nanowire networks

Gong

Wang

et al. 2016

AIP Advances

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We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

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confidence: 99%

Bipolar resistive switching behaviors of ITO nanowire networks

Gong

Wang

et al. 2016

AIP Advances

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“…Электрические свойства металлических структур на пороге перколяции находятся в промежуточной области, причем проводимостью таких структур можно управлять, переключаясь между высокоомным и проводящим состоянием с помощью подаваемого напряжения. Подобные управляемые изменения проводимости обнаружены и активно исследуются во многих материалах [1][2][3][4] для использования их в качестве запоминающих устройств.…”

Section: Introductionunclassified

Серебряные Структуры На Пороге Перколяции, Полученные С Помощью Лазерного Отжига

Гладских¹,

Полищук²,

Вартанян³

2017

Физика Твердого Тела

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Экспериментально исследованы электрические, оптические и структурные свойства серебряных наноструктур на пороге перколяции, полученные из проводящей пленки с помощью лазерной обработки. Обнаружено, что при подаче на пленку порогового напряжения резко изменяется ее сопротивление. При высоких напряжениях наблюдается участок с отрицательным дифференциальным сопротивлением. Данные изменения проводимости под действием приложенного напряжения объясняются малыми структурными изменениями пленки.

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“…When SRO thin films were directly deposited without a YSZ buffer layer on a glass substrate, we only obtained the preferred ͑110͒-oriented growth. 17,20 The preferentially ͑220͒-oriented YSZ buffer layers enabled the growth of preferentially ͑100͒-oriented SrRuO 3 bottom electrodes. For the growth of a preferentially c-oriented PZT thin film on an SRO/YSZ/ glass substrate, we used YSZ buffer layers to improve the crystallinity of PZT thin films on glass substrates.…”

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confidence: 99%

“…For the fabrication of SRO bottom electrodes, we also deposited SRO thin films on YSZ buffer layers on glass substrates by PLD. 17 We used the substrate temperature of 700°C with the oxygen partial pressure of 100 mTorr for the optimum deposition condition of SRO thin films.The structures of YSZ, SRO, and PZT thin films were investigated by X-ray diffraction ͑XRD, Cu K radiation 1.542 Å͒. The tentative composition of PZT thin film was obtained by a energydispersive X-ray spectrometer and auger electron spectroscopy.…”

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confidence: 99%

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Highly c-Oriented PbZr[sub 0.48]Ti[sub 0.52]O[sub 3] Thin Films on Glass Substrates

Son

Shin

2009

Electrochem. Solid-State Lett.

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We obtained preferentially ͑220͒-oriented yttria-stabilized zirconia ͑YSZ͒ buffer layers on glass substrates by pulsed laser deposition. These preferentially ͑220͒-oriented YSZ buffer layers enabled us to grow preferentially ͑100͒-oriented SrRuO 3 bottom electrodes. On the preferentially ͑100͒-oriented SrRuO 3 bottom electrodes, we obtained preferentially c-oriented PbZr 0.48 Ti 0.52 O 3 ͑PZT͒ thin films, which were confirmed by an X-ray diffraction experiment. The highly c-oriented PZT thin films exhibited a high ferroelectric polarization of about 32 m/cm 2 . We also checked a high storage density of about 10 Tbit/in 2 with a minimum bit size below 8 nm with the highly c-oriented PZT thin films by electric force microscope.Generally, a hard disk drive ͑HDD͒ uses ferromagnetic domains as memory bits, which is confirmed by magnetoresistance and giant magnetoresistance ͑GMR͒ devices. 1-3 Especially, the GMR technique makes it possible to read small ferromagnetic domains below tens of nanometer. 1,2 Thus, to increase the HDD storage density, it is required to write a small ferromagnetic domain as a memory unit rather than to develop reading techniques. Hereupon, another obstacle is superparamagnetism, which results from losing ferromagnetism when small ferromagnetic domains decrease below 10 nm. 4,5 In other words, it is difficult to write small ferromagnetic domains below 10 nm as a memory unit. There have been wide studies on overcoming the superparamagnetic limit of ferromagnetic storage media. 6,7 Meanwhile, we can obtain a ferroelectric domain size below 5 nm as a minimum nucleus, which gives the opportunity for the substitution of ferromagnetic media. 8 Many researchers have demonstrated ferroelectric storage media based on scanning probe microscopy ͑SPM͒ techniques such as electric force microscopy ͑EFM͒, Kelvin probe force microscopy ͑KFM͒, and piezoelectric force microscopy ͑PFM͒. 9-13 In the early stage of these SPM studies on switching ferroelectric domains, there have been studies on basic characteristics such as observations of ferroelectric domains, maximum resolutions of KFM, EFM, and PFM, and feasibility of ferroelectric storage media. 9-13 For the practical application of ferroelectric storage media, it is necessary to fabricate ferroelectric thin films on glass substrates similar to HDD. 14 For the preparation of a good ferroelectric thin film, we need highly crystallized bottom electrodes such as well-ordered Pt bottom electrodes. In this study, we fabricated preferentially ͑100͒-oriented SrRuO 3 ͑SRO͒ bottom electrodes with preferentially ͑220͒-oriented yttria-stabilized zirconia ͑YSZ͒ buffer layers on glass substrates by pulsed laser deposition ͑PLD͒. 15,16 Preferentially c-oriented PbZr 0.48 Ti 0.52 O 3 ͑PZT, with a composition close to the morphotropic phase boundary͒ thin films were grown on the preferentially ͑100͒-oriented SRO bottom electrode, which showed a high ferroelectric polarization of about 32 C/cm 2 . High storage density with a minimum bit size below 8 nm was achieved by the pre...

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Bistable resistive states of amorphous SrRuO3 thin films

Cited by 21 publications

References 19 publications

Bipolar resistive switching behaviors of ITO nanowire networks

Bipolar resistive switching behaviors of ITO nanowire networks

Серебряные Структуры На Пороге Перколяции, Полученные С Помощью Лазерного Отжига

Highly c-Oriented PbZr[sub 0.48]Ti[sub 0.52]O[sub 3] Thin Films on Glass Substrates

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