Bistable impedance states in MIS structures through controlled inversion

Abstract

Metal silicon-nitride n-p+ silicon diodes have been fabricated with I-V characteristics similar to those of a four-layer diode. Switching between the two impedance states, whose impedance levels differ by a factor of the order of 106, can be accomplished in less than 5 nsec. The impedance of the device is controlled by the presence or absence of the inversion layer of the MIS structure. Both impedance states require a nonzero conductance of the insulator.

The characterisation of metal-thin insulator-n-p+ silicon switching devices

“…Discussion. -It seems clear that the punchthrough and avalanche models of MISS switching, developped by Simmons and El-Dadry [5], do not apply to our own results nor, most likely, to the results of other workers [1][2][3][4]. Yamamoto and Morimoto [1] have already tentatively suggested the possibility of a regenerative mechanism of switching related to the build-up of an inverted region in the Si at the Si-S'02 interface.…”

“…In figure 4 the current seems to rise from its OFF to ON-state values in a two-stage process ; this was a common but not universal feature of our measurements : for the range of pulse heights used, tD is of the order 10 -8-10 -5 seconds. Kroger and Wegener [2] report delay times as short as a few nanoseconds or less, but they applied pulses rather greater in magnitude than those used for the present studies.…”

“…For the two terminal device, Simmons and El-Badry [5] have developed two simple electrostatic models based on punch-through and avalanche mechanisms appropriate, respectively, to lightly ( 1015 cm-3) and heavily (> 1017 [6]. However the experiments described in [1][2][3][4] have been carried out with Si of medium doping levels ( > 1015 cm. -3) and neither these results, nor our own, fit the models of Simmons and El-Badry [5].…”

“…-There have been several recent reports of potentially useful bistable switching properties in metal-insulator-n-p+ (or -p-n+) structures on silicon (i.e. MISS devices) [1][2][3][4][5][6]. It is necessary for the insulator to be either thin enough (e.g.…”

The effect of non-zero switch-off voltage upon the transient of MISS diodes

“…Some switching transient measurements were first reported by Kroger and Wegener [2] and Yamamoto et al [3], and more detailed data were given by Buxo et al [GI.…”