2022
DOI: 10.1007/s12274-022-4765-9
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Bismuth stabilized by ZIF derivatives for electrochemical ammonia production: Proton donation effect of phosphorus dopants

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Cited by 20 publications
(17 citation statements)
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“…However, the semiconductor MoO 3 possesses a wide energy gaps of ∼3.0 eV, which leads to low carrier concentration and poor electronic conductivity. Doping has been demonstrated as an effective approach to modify electronic conductivity by generating impurity energy level in the bandgap, which associates with the density of the carrier and transfer characteristics of the electrode materials (see Figures a and b). Theoretically, the conductivity (σ) is astricted by the density of the carrier ( n ), positive and negative charges ( q ), and transfer characteristics (μ), which can be described as …”
Section: Resultsmentioning
confidence: 99%
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“…However, the semiconductor MoO 3 possesses a wide energy gaps of ∼3.0 eV, which leads to low carrier concentration and poor electronic conductivity. Doping has been demonstrated as an effective approach to modify electronic conductivity by generating impurity energy level in the bandgap, which associates with the density of the carrier and transfer characteristics of the electrode materials (see Figures a and b). Theoretically, the conductivity (σ) is astricted by the density of the carrier ( n ), positive and negative charges ( q ), and transfer characteristics (μ), which can be described as …”
Section: Resultsmentioning
confidence: 99%
“…To overcome the issues of irreversible structure variation during repeated Mg 2+ insertion/extraction process, interstitial doping is also an effective strategy to enhance the structural stability by introducing pillared ions or molecules in layered materials. The inserted pillared ions and molecules (e.g., Li + , Na + , Mg 2+ , phenylamine (PA), polyvinylpyrrolidone (PVP)) in the interlayer can expand interlayer spacing for reducing Mg 2+ energy barrier along the ac plane and serve as a “pillar” to stabilize the layered structure and inhibit collapse of the structure, thereby improving the cycling life of RMBs. However, the pillared ions or molecules with a large ionic radius have occupied a few Mg 2+ storage place, which leads to insufficient Mg 2+ intercalation . Therefore, it remains a huge challenge to intelligently search the interstitial doped ions in layered materials to enhance the structural stability without affecting the rapid Mg 2+ diffusion.…”
mentioning
confidence: 99%
“…Working electrodes (BiMoO/CC, BiMoO‐OVs/CC, Bi 2 MoO 6 /CC, and Bi 2 MoO 6 ‐OVs/CC) were prepared according to our previous work (as shown in the Supporting Information). [ 36 ] Carbon rod and Ag/AgCl electrode (filled with 3.5 m KCl solution) were used as the counter electrode and the reference electrode, respectively. Nitrogen (N 2 , 99.999%) or argon (Ar, 99.999%) was continuously supplied to the cathode during the electrocatalytic process.…”
Section: Resultsmentioning
confidence: 99%
“…[3] Considering the above-mentioned, bismuthbased catalysts become the most promising NRR catalysts for large-scale NH 3 production since they possess the advantages of intrinsic NRR electrocatalytic activity and inert HER activity due to the Bi 6p orbital electrons can facilitate the adsorption and activation of N 2 molecular thus compromise the adsorption of H 2 , low price, simple preparation, nontoxic, and environmentally friendly. [36] Among various bismuth-based catalysts, bismuth molybdates as a kind of semiconductors, have attracted increasing interests in NRR due to their unique chemical and physical properties such as multicomponent catalytic active centers of Bi and Mo, adjustable morphologies and chemical compositions, optical and electrochemical properties, and high thermal/chemical stability. [37] For instance, Sun and co-workers explored hollow Bi 2 MoO 6 sphere as active electrocatalyst for NRR under environmental conditions.…”
Section: Introductionmentioning
confidence: 99%
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