Bismuth Seed-Assisted Liquid-Phase Synthesis of Germanium Telluride Nanowires

Abstract

GeTe (GT) nanowires (NWs) were successfully synthesized using Bi seeds by a low-temperature solution-based process. Scanning electron microscopy (SEM) images show formation of straight and cylindrical shaped GT NWs together with spherical shaped Te particles. GT NWs were ∼50-100 nm in diameter and ∼2 µm in length. X-ray diffraction (XRD) patterns of as-prepared samples show formation of hexagonal Te, orthorhombic GeTe, and amorphous phase in the samples. The [008] growth of orthorhombic GeTe NWs was identified using high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). Ostwald ripening was proposed as a growth mechanism of GT NWs. Differential scanning calorimetry (DSC) results on the samples reveal an apparently decreased melting point of GT.

How Does the Distribution of External Magnetic Lines of Force Influence the Growth of Ferromagnetic Material?

“…At the final stage, the assembled microspheres fuse together to form wire-like structures owing to Ostwald ripening. 24 The unassembled microspheres just grow larger. The hemispherical crystals may come from the microspheres which are attached on the walls of flasks due to the attractive force of the external magnetic field.…”

“…The resulting interactions among these quasi-one-dimensional magnets could disturb the assembling process of the microspheres, leading to partly assembled microspheres. At the final stage, the assembled microspheres fuse together to form wire-like structures owing to Ostwald ripening . The unassembled microspheres just grow larger.…”

Recent advances in IV–VI semiconductor nanocrystals: synthesis, mechanism, and applications

“…52 Besides, significant progress has been made in recent years with regard to the synthesis of high-quality GeTe NWs via the metal catalyst mediated vapor-liquid-solid (VLS) method. [53][54][55] As displayed in Fig. 4, the morphology of the synthesized NWs 56 with diameters ranging from 50 to 200 nm and lengths up to tens of micrometers is characterized.…”

Syntheses of pure GeTe crystals from single source precursors (R2GeTe)3 (R=Et, Bu)

“…Size-dependent polar ordering was investigated with mono-disperse GeTe nanocrystals with different sizes [12]. GeTe and Ge 2 Sb 2 Te 5 nanowires were synthesized by a vapor transport method via the metal catalyst-mediated vapor-liquid-solid (VLS) and their memory switching effects were characterized [13][14][15].…”