“…The absorption tail at ∼1250 nm for Bi 4 O 4 SeBr 2 and Bi 4 O 4 SeCl 2 can be attributed to the extrinsic defect states. Given that the Bi 2 O 2 Se and Bi 2 O 2 Cl 2 (Bi 2 O 2 Br 2 ) end-member materials have indirect band gaps of ∼0.8 and 3.46 eV (2.92 eV), respectively, ,, the intergrowth materials Bi 4 O 4 SeX 2 and Bi 6 O 6 Se 2 X 2 most probably have indirect band gaps, which could be obtained on the Tauc plot as the intercept on the dashed baseline from the linear fits to the [ F ( R ) E ] 1/2 at the intrinsic absorption edge of 860–1000 nm. , From the corresponding Tauc plots (Figure b), the indirect band gaps of Bi 4 O 4 SeBr 2 , Bi 4 O 4 SeCl 2 , and Bi 6 O 6 Se 2 Cl 2 were estimated to be 1.07(5), 1.05(5), and 1.04(5) eV, respectively, with the value for Bi 4 O 4 SeCl 2 matching well with the reported value of 1.15(5) eV . An extrinsic defect-related sub-bandgap was estimated to be 0.73(5) and 0.75(5) eV for Bi 4 O 4 SeBr 2 and Bi 4 O 4 SeCl 2 , respectively (Figure b).…”