Boron-doped π-conjugated materials have generated
interest
owing to their interesting photophysical properties derived from the
empty p-orbital on boron. In particular, the electron-accepting properties
of triarylborane units are useful for the development of electron-deficient
π-conjugated materials such as organic n-type semiconductors.
On the other hand, sulfones and sulfoxides are also electron-deficient
species that can be easily prepared by oxidation of the corresponding
sulfides. In this work, we prepared new thiophene-fused thiaborin
conjugated building blocks with different oxidation states of the
sulfur atom. The new building blocks possess distinct photophysical
properties that are dependent on the oxidation state of the sulfur
atom. In particular, the sulfone compound exhibits a LUMO energy level
that is markedly lower than those of the corresponding dithienylborane
and dithienylthiophene S,S-dioxide,
suggesting that the combination of boron and sulfone enhances the
electron-accepting properties. In addition, the sulfone unit can be
modified by the Stille cross-coupling reaction, demonstrating its
potential use in other functional p-π* conjugated materials.