This study presents a measurement method for determining the figure of merit for transverse thermoelectric conversion (zTT) in thin film forms. Leveraging the proposed methodology, we comprehensively investigate the transverse thermoelectric coefficient (ST), in-plane electrical conductivity (σyy), and out-of-plane thermal conductivity (κxx) in epitaxial and polycrystalline Fe/Pt metallic multilayers. The κxx values of multilayers with a number of stacking repetitions (N) of 200 are lower than those of FePt alloy films, indicating that the multilayer structure effectively contributes to the suppression of κxx. zTT is found to increase with increasing N, which remarkably reflects the Ndependent enhancement of the ST values. Notably, ST and σyy are significantly larger in the epitaxial multilayers than those in the polycrystalline counterparts, whereas negligible differences in κxx are observed between the epitaxial and polycrystalline multilayers. This discrepancy in σyy and κxx with respect to crystal growth is due to the different degree of anisotropy in electron transport between epitaxial and polycrystalline multilayers, and epitaxial growth can lead to an enhancement of zTT in the multilayers. The present measurement technique reveals the transverse thermoelectric properties inherent to multilayers.
I. INTRODUCTIONTransverse thermoelectric conversion refers to the generation of electric field by perpendicularly applying a temperature gradient [1,2]. In contrast to the longitudinal thermoelectric conversion based on the Seebeck effect (SE), which needs three-dimensional serial junctions to achieve high device performance, the transverse thermoelectric conversion has an advantage of a