Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Tsai, Tsung‐Ming; Chang, Kuan‐Chang; Chang, Ting‐Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Gerard J.; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui‐Chun; Liu, Shih-Kun; Tai, Ya‐Hsiang; Gan, Dershin; Yang, Ya‐Liang; Young, Tai‐Fa; Tseng, Bae–Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.

doi:10.1109/led.2012.2217933

Cited by 49 publications

(9 citation statements)

References 13 publications

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“…Therefore, metal doped into SiO 2 by cosputtering at room temperature was taken as the resistance switching layer of RRAM in this section. Furthermore, different metal elements were doped into SiO 2 as the resistance switching layer to investigate the metal dopant type influence on resistive switching behaviors [125][126][127][128][129][130]. Figure 15a shows the current-voltage (I-V) properties of the control sample with the Pt/SiO 2 /TiN sandwich structure.…”

Section: Metal-doped Silicon Oxide-based Resistance Random Access Memorymentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

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In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO 2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

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Section: Metal-doped Silicon Oxide-based Resistance Random Access Memorymentioning

confidence: 99%

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang¹,

Chang²,

Tsai³

et al. 2016

Nano Online

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“…[14,15] However, functional devices based on pure SiO x switching layers suffered from high switching voltages and limited endurance. [14][15][16][17] On the other hand, it has been demonstrated that introducing metallic dopants, such as Ni, [18] Zr, [19] and Pt, [20,21] into the SiO 2 layer improves the performances, although the highest reported endurance was around 3 × 10 7 cycles. [21] Building memristor crossbars into 3D is an effective approach to provide high packing density and flexibility/ efficiency for computing because of their massive and complex connectivity.…”

Section: Introductionmentioning

confidence: 99%

Scalable 3D Ta:SiO_x Memristive Devices

Jiang

Lin

et al. 2019

Adv Elect Materials

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and hence is more bit cost-efficient. [25] However, 3D vertical structure with SiO x switching layer has not been achieved yet.Herein, we report a Ta:SiO 2 device with reliable bipolar memristive switching. After introducing Ta cations, our devices showed high uniformity, superior endurance (>10 9 cycles), fast switching speed, reliable retention, and analog modulation of device conductance. In addition, we studied the scaling ability of the Ta:SiO 2 -based 3D vertical devices with sizes ranging from micro-to nanoscale (as small as 60 × 15 nm 2 ). The switching behavior shows weak dependence on area size when the device is relatively large; after that, state conductance and the operation current decrease when the device is further scaled down. We built 3D devices and achieved similar memristive behavior from both the top and bottom cells in a two-layer vertical device. Our work confirms that doping SiO x is an efficient way to tailor properties of memristive devices, which has great scalability and stackability. Results and Discussion Ta:SiO 2 Thin Films Prepared by Co-SputteringThe Ta:SiO 2 thins film were prepared by co-sputtering from Ta and SiO 2 targets. Figure 1 schematically shows the principle of the co-sputtering process, in which two targets are sputtered simultaneously in the chamber. The SiO 2 target was sputtered at a constant radiofrequency (RF) power of 270 W, while the Ta target was sputtered with varied direct current (DC) powers ranging from 0 to 20 W. The atomic ratios for Ta dopants sputtered at 10 and 20 W were determined to be 14.1% and 22.5%, respectively. More importantly, the Ta in the thin films is in different valence states, as revealed by X-ray photoemission spectroscopic (XPS) characterization (Figure 2). The Ta 4f XPS spectra from films after 4 min Ar + sputtering inside the chamber were deconvolved into three chemical states of Ta: fully oxidic (Ta 5+ ), suboxidic, and metallic states. [29] The atomic ratios of the three states were calculated to be 57.65%/25.97%/16.39% (Figure 2a) and 34.91%/29.81%/35.28% (Figure 2b), respectively, for the two films prepared with different DC powers on Ta. The concentration of the Ta metallic state increased evidently in the film with a higher Ta sputtering power.From electrical measurements (see Figure S1 in the Supporting Information), the device without Ta doping was hard breakdown, while the device based on Ta 22.5% :SiO 2 was directly shorted. On the contrary, reliable memristive switching A highly reliable memristive device based on tantalum-doped silicon oxide is reported, which exhibits high uniformity, robust endurance (≈1 × 10 9 cycles), fast switching speed, long retention, and analog conductance modulation. Devices with junction areas ranging from microscale to as small as 60 × 15 nm 2 are fabricated and electrically characterized. ON-/OFF-conductance and reset current show weak area dependence when the device is relatively large, and they become proportional to the device area when further scaled down. Two-layer devices with repeatabl...

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“…[8][9][10][11][12][13] Among numerous resistive switching materials, the silicon-based oxide thin films were intensively investigated for the applications in RRAM for portable electrical devices owing to its compatibility in integrated circuit (IC) processes and relative stability compared with metal oxide materials. [14][15][16][17][18][19][20][21][22][23][24][25][26] Filament formation and rupture is considered to be the reason of resistive switching in RRAM devices. [27][28][29] Thus, the filament shape and formation process affects the magnitude of working current, which in turn influences the power consumption of the device.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Zhang

Tsai

Chang

et al. 2013

Journal of Applied Physics

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In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Cited by 49 publications

References 13 publications

Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

Scalable 3D Ta:SiO_x Memristive Devices

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Cited by 49 publications

References 13 publications

Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

Scalable 3D Ta:SiOx Memristive Devices

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

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Scalable 3D Ta:SiO_x Memristive Devices