2014
DOI: 10.1016/j.ultras.2013.10.010
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Bipolar-power-transistor-based limiter for high frequency ultrasound imaging systems

Abstract: High performance limiters are described in this paper for applications in high frequency ultrasound imaging systems. Limiters protect the ultrasound receiver from the high voltage (HV) spikes produced by the transmitter. We present a new bipolar power transistor (BPT) configuration and compare its design and performance to a diode limiter used in traditional ultrasound research and one commercially available limiter. Limiter performance depends greatly on the insertion loss (IL), total harmonic distortion (THD… Show more

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Cited by 8 publications
(7 citation statements)
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References 10 publications
(16 reference statements)
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“…Many pre-clinical US imaging systems use high frequency transducers in the range 40 to 80 MHz (ref. [43][44][45][46] with recent advances to 100 MHz, 47,48 which may be indicative that the nanobubbles will show enhanced contrast and be useful as higher resolution image contrast agents for preclinical imaging and high frequency clinical imaging.…”
Section: Ultrasound Measurementsmentioning
confidence: 99%
“…Many pre-clinical US imaging systems use high frequency transducers in the range 40 to 80 MHz (ref. [43][44][45][46] with recent advances to 100 MHz, 47,48 which may be indicative that the nanobubbles will show enhanced contrast and be useful as higher resolution image contrast agents for preclinical imaging and high frequency clinical imaging.…”
Section: Ultrasound Measurementsmentioning
confidence: 99%
“…For small apertures, higher frequency (> 15 MHz) transducers usually have lower sensitivity than that of lower-frequency transducers [19]. Since high-frequency transducer performance is highly dependent on the PA dynamic range, a linear PA is desirable for ultrasound electronics.…”
Section: Discussionmentioning
confidence: 99%
“…IN 1 and IN 2 represent the signal inputs, and OUT 1 and OUT 2 represent the signal outputs of the two-stage class-B amplifier. Z IN1 and Z IN2 are the impedance values observed at the signal’s input, and Z OUT1 and Z OUT2 are the impedance values observed at the output of the signal [ 59 ]. C GS represent the transistor’s internal gate-source capacitances.…”
Section: Methodsmentioning
confidence: 99%