Bipolar one diode–one resistor integration for high-density resistive memory applications

Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Huaqing; Zhang, Kangwei; Huo, Zongliang; Liu, Ming

doi:10.1039/c3nr33370a

Cited by 52 publications

(35 citation statements)

References 46 publications

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“…To observe the acceptable resistive switching behavior, some switching materials such as TaO x [6-8], HfO x [9,10], and AlO x [11-13] show promise for future applications. Further, to obtain high-density and device scaling, different kinds of device structures have been reported [14-16].…”

Section: Introductionmentioning

confidence: 99%

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

2014

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A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of <5 V and a high-current-carrying conductor of >70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >106 cycles are observed with read voltages of −1, 1, and 4 V. However, read endurance is failed with read voltages of −1.5, −2, and −4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >103 s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future.

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Section: Introductionmentioning

confidence: 99%

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

2014

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“…to self-compliance in the future. [16][17][18] On the other hand, several key issues of resistive switching, such as uniformity and reliability, also hinder the commercialization of RRAM. Numerous efforts have been devoted to design memory devices with self-compliance effect 16,19,20 and address the uniformity issue of RRAM devices.…”

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confidence: 99%

Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO2/p-Si devices

Zou

et al. 2014

AIP Advances

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Articles you may be interested inStabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current Appl. Phys. Lett.We report uniform bipolar resistive switching characteristic with self-compliance effect of Pt/TiO 2 /p-Si devices in which TiO 2 thin films were prepared directly on p-Si substrates by chemical solution deposition method. The resistive switching parameters of the Pt/TiO 2 /p-Si cell obtained, such as distribution of threshold voltages, retention time, as well as resistance variation of high resistance state (HRS) and low resistance state (LRS), were investigated, and the conduction mechanisms of HRS and LRS were analyzed. The conductive mechanism at LRS and low voltage region of HRS was dominated by Ohmic law. At the high voltage region of HRS, the conductive mechanism followed the space charge limited current theory. The resistive switching phenomenon can be explained by electron trapping and de-trapping process, in which the defects (most probably oxygen vacancies) act as electron traps. Our study suggests that using p-type silicon as bottom electrode can provide a simple method for fabricating a resistive random access memory with self-compliance function. In addition, the Pt/TiO 2 /p-Si configuration is compatible with complementary metal oxide semiconductor process. C 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.

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“…1,5 This issue will be further exacerbate when the selected cell is in the high resistance state (HRS), whereas all unselected cells are in the low resistance state (LRS). In order to solve above issue, five methods have been proposed, including one transistor-one resistor structure (1T1R), 6,7 one diode-one resistor structure (1D1R), 8,9 one bidirectional selector-one resistor structure (1S1R), 10,11 complementary resistive switch (CRS), [12][13][14][15] and one resistor with self-rectifying effect. [16][17][18][19] Given the facts that integrating additional nonlinear access devices can inevitably increase the complexity of fabrication process and accurate match is usually required between the electrical characteristics of memory cell and nonlinear access device, the first three methods are not advisable for most cases.…”

Section: Introductionmentioning

confidence: 99%

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

et al. 2016

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One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO2/n-Si tri-layer devices are fabricated and investigated through I − V characteristic measurement. The experimental results demonstrate that the device exhibits forming-free behavior and a remarkable rectifying effect in low resistance state (LRS) with rectification ratio of 104 at ±1 V, as well as considerable OFF/ON ratio (resistive switching window) of 104 at 1 V. The formation and annihilation of localized Cu conductive filament plays a key role in the resistive switching between low resistance state (LRS) and high resistance state (HRS). In addition, intrinsic rectifying effect in LRS attributes to the Schottky contact between Cu filament and n-Si electrode. Furthermore, satisfactory switching uniformity of cycles and devices is observed. As indicated by the results, Cu/HfO2/n-Si devices have a high potential for high-density storage practical application due to its excellent properties.

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Bipolar one diode–one resistor integration for high-density resistive memory applications

Cited by 52 publications

References 46 publications

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO2/p-Si devices

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

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