“…[13][14][15] Polytypes, such as 2H, 4H, and 3C-SiC, were grown on sapphire and Si single-crystal substrates at low temperatures of 1200-1300°C. [15][16][17] PLAD has many advantages and is useful for fabricating other wide gap semi-conductors, such as GaN, [18][19][20][21] ZnO, 22,23 and diamond, 24,25 as well as superconductors, 26 ferroelectrics, 27 and magnetoresistance materials, 28 but apparatus and techniques for doping have not been developed. Doping might be possible with conventional apparatus using a single target if mixed targets are to be prepared.…”