Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection

Abstract

Label-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization of amine-modified single strand DNA on the self-assembled monolayers of 11-mercaptoundecanoic acid. The sensor exhibited a substantial current drop upon introduction of complimentary DNA to the gate well, which is a clear indication of the hybridization. The application of 3 base-pair mismatched target DNA showed little change in output current characteristics of the transistor. Therefore, it can be concluded that our DNA sensor is highly specific to DNA sequences. V

Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes

“…A SAM is adsorbed on the Ni/Au extended-gate via a thiol-modifying reaction, owing to a strong interaction between Au and the thiol group. (16)(17)(18) To confirm that the modification was successful, XPS measurements were performed under the same conditions as the electrical measurements of the fabricated extended-gate HFET-type biosensor. Figure 8 shows the measured high-resolution XPS spectra of S 2p and S 2s after SAM immobilization of the Au-coated GaN sample.…”

Electronic Biosensors Based on III-Nitride Semiconductors

“…They reported a great repeatability and recovery of the device and no nonspecific reactions. However, Thapa et al (57) pointed out that the attachment of a thiolated probe DNA involves the rearrangement of DNA film structure, which may result in an arbitrary change of the surface potential and consequently a decreased specificity of the biosensor. An alternative aminemodified single-stranded DNA on the self-assembled monolayers of 11-mercaptoundecanoic acid was proposed.…”

High-quality n-type aluminum gallium nitride thin films grown by interrupted deposition and in-situ thermal annealing

“…Particularly, high Al mole fraction Al x Ga 1À x N (x450%) alloys can be used for deep ultraviolet light-emitting diodes (LED), detectors and lasers [2], which are targeted for a wide range of potential applications, such as water purification, sterilization, biological detection, medical treatment and high density optical recording [3][4][5][6]. To make these kinds of devices, intentional n-type doping is essential to control the electrical properties.…”