Binding energy of the complex (D+-X) with Γ-Xmixing in GaAs/AlAs quantum wells

Exciton bound by distant ionized donor in two-dimensional GaAs/AlGaAs quantum well

“…As can be seen E B D 0 is less than zero only for high magnetic field and respectively small d. In this range of parameters the complex (D + , X) is unstable due to dissociation process (5). Moreover, in the absence of magnetic field E B X is less than zero for d greater than about 3.9 nm, which means that the complex is unstable due to dissociation process (6). This critical distance decreases with increasing field which may reflect the fact that in a magnetic field the Coulomb interaction energy in X is growing relatively quickly while the ionized donor (because of repulsive potential for hole) prevents such rapid growth of this energy in bound exciton.…”

“…The binding energy of an exciton bound to an ionized donor in GaAs/Al x Ga 1−x As QW has been calculated for finite well widths and different impurity position by Liu and co-workers 5 and da Cunha Lima et al 6 . Stébé and co-workers 7 studied variationally the influence of the magnetic field on the stability of created complex.…”

On two-dimensional exciton bound by distant ionized-donor in a narrow quantum well

“…For finite well width Liu and co-workers [5], using a twoparameter wave function, calculated variationally the binding energy of an exciton bound to an ionized donor impurity (D + , X) in GaAs/Al x Ga 1−x As QW for the values of the well width from 1 to 30 nm, when the dopant is located in the center of the well and at the edge of the well. da Cunha Lima et al [6] performed a variational calculation of the binding energy of the (D + , X) complex for all values of well widths, and impurity position inside the well, including Γ-X mixing in GaAs/AlAs QWs. Stébé and co-workers [7] studied variationally the influ-ence of the magnetic field on the binding energy of (D + , X) in GaAs/Al x Ga 1−x As QWs.…”

Influence of a magnetic field on an exciton bound to an ionized donor impurity inGaAs/Ga1−xStébé1, Essaoudi2, Ainane3 et al. 2001Phys. Rev. B6000View full textAdd to dashboardCite

“…15 and xϭ0.30. da Cunha Lima et al 11 studied the binding energy of the complex (D ϩ ,X) taking into account the ⌫-X mixing in GaAs/Ga 1Ϫx Al x As QW's in the vicinity of the type-I to type-II transitions. They obtained a ratio between the binding energy of the exciton to an ionized donor and that of the neutral donor equal to 0.95Ϯ0.005 for all values of well widths explored, and independent of the impurity position inside the well.…”